2SD1622S-TD-E
Part Number 2SD1622S-TD-E
Manufacturer onsemi
Description BIP NPN 1A 50V
Quantity Available 5890 pcs new original in stock.
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Datasheets
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Technical Information of 2SD1622S-TD-E
Manufacturer Part Number 2SD1622S-TD-E Category Discrete Semiconductor
Manufacturer AMI Semiconductor/onsemi Description BIP NPN 1A 50V
Package / Case Bulk Quantity Available 5890 pcs
Series * Product Status Active
Package Bulk  
Download2SD1622S-TD-E PDF - DE.pdf

Product Model

2SD1622S-TD-E

Introduction

Silicon NPN Triple Diffused Planar Transistor

Brand and Manufacturer

SANYO Electric Co., Ltd.

Features

High-speed switching

Low collector-emitter saturation voltage

Excellent linearity of hFE

Built-in damper diode

Product Performance

Adequate gain bandwidth product

Stable thermal performance

High breakdown voltage

Technical Specifications

Type: NPN

Collector to Base Voltage (VCBO): 120V

Collector to Emitter Voltage (VCEO): 80V

Emitter to Base Voltage (VEBO): 5V

Collector Current (IC): 3A

Total Power Dissipation (PC): 1.5W

Dimensions, Shape, and Packaging

SOT-89 plastic package

Compact and lightweight design

Supplied in tape and reel for automated assembly

Quality and Reliability

Robust construction for long-term stability

Meets SANYO's stringent quality control standards

Product Advantages

High power handling in a small footprint

Energy-efficient operation

Product Competitiveness

Widely compatible with numerous circuits

Cost-effective solution for high-volume production

Compatibility

Works with a variety of driving circuits and load configurations

Standard Certification and Compliance

Complies with RoHS directives

Ensures environmental and safety standards

Lifespan and Sustainability

Designed for long operational life under typical usage conditions

Eco-friendly materials used in construction

Actual Application Fields

Switching regulators

Power amplifiers

DC-DC converters

Consumer electronics power management systems

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