Product Model

BSP315PH6327XTSA1

Introduction

This product is a single MOSFET transistor that delivers high efficiency and power density.

Brand and Manufacturer

The product is manufactured by International Rectifier, which is now part of Infineon Technologies.

Features

Series: SIPMOS

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Operating Temperature: -55 to 150 C (TJ)

Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V

Vgs (Max): ±20V

Product Performance

This MOSFET has high drain-source voltage of 60V, with a continuous drain current of 1.17A at 25 C. The Rds on is 800 mOhm max at 1.17A, 10V. The drive voltage is 4.5V max Rds on, Min Rds on at 10V.

Technical Specifications

Surface mount technology, contained in a TO-261-4, TO-261AA package. The supplier device package is a PG-SOT223-4.

Dimensions, Shape, and Packaging

It is shipped in a tape and reel packaging. Specific dimensions are not specified in the given parameters.

Quality and Reliability

Produced by International Rectifier (Infineon Technologies), a well-known manufacturer for discrete semiconductors. The product can operate at temperature ranging from -55 C to 150 C.

Product Advantages

It provides high power density and operates efficiently.

Product Competitiveness

Offers reliable operation in extreme temperature ranges, making it suitable for a variety of applications.

Compatibility

Integrates well with various types of circuits due to its

Standard Certification and Compliance

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Standard Certification and Compliance

Compliant with standard semiconductor manufacturing protocols. Specific certification details are not given in the parameters.

Lifespan and Sustainability

Long-lasting and robust, this product works effectively in a wide temperature range.

Actual Application Fields

These types of components are used in applications such as power supplies, motor drives, and other systems requiring high power efficiency.

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