FF200R06KE3 Datasheet, Features, and Industrial Applications
2025-04-03 112

The FF200R06KE3 by Infineon Technologies is a powerful component used in managing high power needs efficiently. This module is packed in a small size but delivers high performance with advanced IGBT technology and special features for better efficiency. This article explains the module’s key features, design, and benefits, emphasizing its role in various applications.

Catalog

FF200R06KE3 Overview

The FF200R06KE3, crafted by Infineon Technologies, is a dual Insulated Gate Bipolar Transistor (IGBT) module that stands out with its 600 V, 200 A specifications. Encased in a compact 62 mm package, it combines TRENCHSTOP™ IGBT3 technology with an Emitter Controlled 3 Diode. This integration boosts both efficiency and performance, making it a top choice for applications requiring robust power management.

For those looking to place bulk orders, the FF200R06KE3 offers a reliable and high-performing solution to meet your needs.

FF200R06KE3 Features

• Voltage and Current Ratings: Capable of handling up to 600 V and 200 A, making it suitable for high-power applications.​

• Advanced Technology: Utilizes TRENCHSTOP™ IGBT3 and Emitter Controlled 3 Diode technologies for optimized switching characteristics, including improved softness and reduced switching losses.​

• High Operating Temperature: Designed to operate at temperatures up to 150°C, ensuring reliability under demanding conditions.​

• Mounting Style: Features a screw mount design for secure and straightforward installation.​

• UL/CSA Certification: Certified under UL1557 E83336, meeting stringent safety and performance standards.​

• RoHS Compliance: Complies with the Restriction of Hazardous Substances directive, reflecting its environmentally friendly design.

FF200R06KE3 Specifications

Maximum Rated Values

Characteristic Values

FF200R06KE3 Circuit Diagram

The circuit diagram shows the internal structure of the FF200R06KE3 IGBT module. It features two IGBT transistors connected in a half-bridge configuration, which is common for switching applications such as inverters and motor drives. Terminals 1 and 3 are the collectors of each IGBT, while terminals 2 and 4 are the emitters. Each IGBT is paired with an anti-parallel diode, allowing current to flow in the opposite direction during switching. Terminals 5 and 6 represent the gate controls for the IGBTs, and terminal 7 is a shared emitter connection. This layout supports efficient switching and reliable reverse recovery through the built-in diodes. It’s designed to handle high currents and voltage with reduced power loss. The FF200R06KE3 is a practical solution for systems needing stable, high-performance switching.

FF200R06KE3 Alternatives

• AMFF200R06KE3

• FF200R12KE3

• FF300R06KE3

• FF200R06KE3HOSA1

• FF200R06KE3-B2

FF200R06KE3 Applications

Frequency-Controlled Inverter Drives

The module's optimized switching characteristics, such as reduced switching losses and improved softness, enhance the performance and efficiency of inverter systems. ​

Industrial Motor Drives

Capable of handling high currents and voltages, the FF200R06KE3 is well-suited for controlling large industrial motors, providing reliable and precise motor operation.​

Power Supplies

The module's high power handling capabilities make it ideal for use in power supply units that require efficient energy conversion and management.​

Renewable Energy Systems

In applications such as solar and wind energy conversion, the FF200R06KE3 can be utilized to manage the efficient transfer and conversion of energy from renewable sources.

FF200R06KE3 Package Outline

The packaging diagram of the FF200R06KE3 shows a detailed mechanical layout of the module. It uses a standard 62 mm housing, measuring 106.4 mm in length and 62 mm in width. The module has three main terminals for power connections, each spaced evenly at 28 mm apart, with mounting holes on both ends for secure installation. The height of the housing is around 30 mm, including the terminal pins. It includes a 7-pin control connector (DIN46244-A2.8-0.5-BZ) on the side for gate and emitter signal control. The drawing also specifies mounting depths (minimum 7 mm, maximum 10 mm) and tolerances according to ISO2768 standards. This standardized outline helps you easily integrate the module into your designs with precise mounting and wiring.

FF200R06KE3 Benefits

High Efficiency: Utilizing advanced IGBT technology, the module achieves low on-state voltage drop, resulting in reduced conduction losses and improved overall efficiency.​

Robust Thermal Performance: Designed for good thermal stability, the FF200R06KE3 can operate effectively under high-temperature conditions, ensuring consistent performance and longevity.​

Ease of Use: The module features a screw mount design, facilitating straightforward and secure installation in various systems. ​

Compact Design: With a length of 106.4 mm, the FF200R06KE3 offers a compact form factor, allowing for efficient use of space within equipment and systems. ​

Manufacturer

Infineon Technologies AG, headquartered in Neubiberg, Germany, is a leading global semiconductor manufacturer. Established in 1999 as a spin-off from Siemens AG, Infineon has grown to become one of the world's top ten semiconductor companies. The company employs approximately 58,000 people and reported sales of around €15 billion in 2024. ​

Conclusion

In summary, the FF200R06KE3 module from Infineon Technologies demonstrates innovation in power management. It is designed to support a wide range of demanding applications with its high efficiency and robust performance. This article shows why the FF200R06KE3 is a reliable choice for anyone needing advanced power solutions, making it a valuable tool in modern industrial settings.

Datasheet PDF

FF200R06KE3 Datasheet:

FF200R06KE3.pdf
FF200R06KE3 Details PDF
FF200R06KE3 PDF - DE.pdf
FF200R06KE3 PDF - FR.pdf
FF200R06KE3 PDF - ES.pdf
FF200R06KE3 PDF - IT.pdf
FF200R06KE3 PDF - KR.pdf