Guide Before Buying Fuji Electric 2MBI1000VXB-170E-54 IGBT Module
2025-04-03 99

The 2MBI1000VXB-170E-54 is a high-performance IGBT module from Fuji Electric, designed for use in power electronics like motor drives, inverters, and UPS systems. It combines fast switching with high current handling, making it ideal for industrial applications. With a 1700V voltage rating and 1000A current capacity, this module provides reliable and efficient performance. This article gives an overview of its features, benefits, and drawbacks for you looking for quality components in bulk.

Catalog

2MBI1000VXB-170E-54 Description

The 2MBI1000VXB-170E-54 is an IGBT module manufactured by Fuji Electric, designed for high-efficiency power electronics applications. It combines the fast switching capabilities of MOSFETs with the high-current handling and low-saturation voltage of bipolar transistors.

These features make it ideal for use in a range of power electronics systems where efficient and reliable switching is required. With a voltage rating of 1700V and current capabilities suitable for demanding applications, this IGBT module is commonly used in industrial systems such as motor drives, power inverters, and uninterruptible power supplies (UPS).

Its robust design ensures durability in high-performance environments, offering both reliability and efficiency for industrial applications. If you're looking to optimize your operations with high-quality components, consider purchasing the 2MBI1000VXB-170E-54 in bulk today to meet your business needs.

2MBI1000VXB-170E-54 Features

• High speed switching - The module can switch on and off quickly, making it ideal for systems that need fast, accurate control, like motors and power supplies.

• Voltage drive - It works well with systems that use a stable voltage, making it easier to integrate and more reliable.

• Low Inductance module structure - The design reduces power loss and improves efficiency, making it suitable for systems that need fast current changes.

2MBI1000VXB-170E-54 Circuit Diagram

The 2MBI1000VXB-170E-54 circuit diagram consists of two main sections: the inverter and the thermistor. The inverter section includes components such as Main C1 (9), (11), Main C2E1 (8), Sense C1 (5), Sense C2E1 (3), G1 (4), G2 (1), and Sense E2 (2). These components work together to convert DC to AC power and ensure stable operation. The "Sense" components monitor the inverter's performance, while the G1 and G2 serve as gate drivers to control the switching devices. Main C1 and C2E1 are capacitors that help stabilize voltage and store energy. The thermistor section, labeled as TH1 (7) and TH2 (6), is used to monitor the temperature of the circuit. If the temperature exceeds safe limits, these thermistors help activate protective measures, ensuring the system operates within safe thermal limits. Together, these components ensure the efficient and safe operation of the module.

2MBI1000VXB-170E-54 Maximum Ratings

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to the base plate during the test.

Note *3: Recommendable Value : Mounting 3.0~ 6.0Nm (M5)

Recommendable Value : Main Terminals 8.0~10.0Nm (M8)

Recommendable Value : Sense Terminals 1.8~ 2.1Nm (M4)

2MBI1000VXB-170E-54 Electrical Characteristics

Note *1: Please refer to page 7, there is definition of on-state voltage at terminal.

2MBI1000VXB-170E-54 Thermal Resistance Characteristics

Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.

2MBI1000VXB-170E-54 Performance Curves

The image shows the performance curves for the 2MBI1000VXB-170E-54 IGBT module, which demonstrates the relationship between collector current (I_c) and collector-emitter voltage (V_ce) at different gate-emitter voltages (V_ge) for two distinct junction temperatures: 25°C (left) and 150°C (right).

At a junction temperature of 25°C, the curves show that the collector current increases with higher gate-emitter voltage, especially for V_ge = 20V, where the module achieves its maximum current capacity. The module starts to turn on at low Vce values and shows a characteristic saturation region as the collector-emitter voltage increases. Higher gate voltages result in higher collector currents, but the effect starts diminishing as Vce rises above a certain threshold.

At a higher junction temperature of 150°C, the curves shift, showing a reduced collector current across all V_ce values compared to the 25°C case. This is a typical behavior of semiconductor devices, as the performance degrades with rising temperature. The saturation effect is still visible, but the current is lower, indicating that thermal effects are limiting the device's capability to conduct. This shift in curves at different temperatures emphasizes the importance of thermal management when designing circuits with this IGBT module.

In the first graph (left), the collector current (I_c) is plotted against the collector-emitter voltage (V_ce) at three different temperatures: 25°C, 125°C, and 150°C. As with the previous curves, we see that the collector current increases with higher V_ce when V_ge is fixed at 15V. At higher temperatures, the maximum collector current decreases, indicating the performance degradation of the module due to thermal effects. This shift underlines the importance of considering temperature management for optimal operation in power electronics applications.

The second graph (right) shows the variation of collector-emitter voltage (V_ce) with gate-emitter voltage (V_ge) at three different collector current levels (500A, 1000A, and 2000A). At a constant junction temperature of 25°C, the V_ce drops as V_ge increases, especially at higher current levels. This indicates the typical behavior of IGBTs, where a higher gate voltage enhances the device’s ability to conduct current, lowering the Vce drop for the same current. These curves are valuable for understanding the trade-off between gate drive requirements and the collector-emitter voltage in high-power applications.

The left graph shows the relationship between the gate capacitance and the collector-emitter voltage (V_ce) of the 2MBI1000VXB-170E-54 at 25°C. It plots input capacitance (C_ies), output capacitance (C_oes), and reverse transfer capacitance (C_res) as functions of Vce. As V_ce increases, both C_oes and C_res decrease, while C_ies stays relatively stable. This behavior is typical for IGBTs, where lower output and reverse transfer capacitances at higher voltages help improve switching speed and reduce switching losses, which is required for high-efficiency inverter applications.

The right graph illustrates the dynamic gate charge characteristics under switching conditions (V_cc=900V, I_c=1000A, T_j=25°C). It shows how the gate-emitter voltage (V_ge) and collector-emitter voltage (V_ce) vary with the accumulated gate charge (Q_g). The curve reveals the gate charge requirements during turn-on and turn-off events. The V_ge curve shows a plateau region where most of the gate charge is consumed in the Miller effect, which directly impacts switching speed. A lower total gate charge is favorable for achieving faster switching with reduced drive losses, making this parameter required when selecting the proper gate driver.

2MBI1000VXB-170E-54 Alternatives

Comparison Between 2MBI1000VXB-170E-54 and FF1000R17IE4

2MBI1000VXB-170E-54 Advantages and Disadvantages

Advantages of 2MBI1000VXB-170E-54

• High Efficiency - The 2MBI1000VXB-170E-54 is designed to minimize energy loss with low switching and conduction losses, making it ideal for power electronics that demand high efficiency.

• Reliable Performance - It performs consistently in industrial and renewable energy systems, offering long-lasting durability even in harsh conditions.

• Compact Size - Its small form factor saves space, making it easy to integrate into various systems without taking up much room.

• High Current Capacity - Capable of handling up to 1000A of current, this module is perfect for high-power applications like motor drives and inverters.

• Effective Heat Management - The module’s low thermal resistance ensures better heat dissipation, allowing it to operate efficiently at high temperatures.

• Versatile Applications - It can be used in a wide range of industries, including motor control, welding machines, and UPS systems, making it highly adaptable.

Disadvantages of 2MBI1000VXB-170E-54

• Limited Voltage Rating - With a 1700V rating, it may not be suitable for applications that require higher voltage, limiting its use in very high-voltage systems.

• Cooling Needs - Although it has good thermal management, it still requires advanced cooling (like forced air or water cooling), which adds complexity and cost to the system.

• Size for High-Power Systems - While compact, the module’s size may still be a drawback in systems that require even more power or in tight spaces where newer, more advanced modules can fit better.

• Higher Initial Cost - As a high-performance module, the 2MBI1000VXB-170E-54 comes at a higher cost, making it less suitable for budget-sensitive applications.

• Limited Switching Frequency - It works well at standard switching frequencies, but for higher-frequency applications, its efficiency may fall behind newer modules designed specifically for high-speed switching.

2MBI1000VXB-170E-54 Applications

• Inverter for Motor Drive - This module helps control motors by changing DC to AC power smoothly. It makes motors run efficiently in machines like fans, pumps, and conveyors.

• AC and DC Servo Drive Amplifier - It is used in servo systems to control the position and speed of motors. This helps robots, CNC machines, and automatic tools work accurately.

• Uninterruptible Power Supply (UPS) - The module provides steady power during blackouts. It keeps required equipment like computers, hospitals, and factories running without stopping.

• Industrial Machines (Welding Machines) - It is great for machines like welders, where strong and steady currents are needed. It helps make clean and reliable welds during production.

2MBI1000VXB-170E-54 Packaging Dimensions

The packaging outline of the 2MBI1000VXB-170E-54 shows the detailed mechanical dimensions and mounting guidelines for the module. The module has an overall length of 250 mm, a width of 89.4 mm, and a height of 38.4 mm, making it suitable for high-power and space-efficient installations. The layout includes multiple mounting holes, terminal positions, and label areas to ensure proper alignment and secure installation.

The module uses M8 and M4 screws for power and control terminals, with specific screwing depths (up to 16 mm and 8 mm) to prevent damage during assembly. The position tolerances of baseplate holes are clearly specified to help us achieve accurate placement on heatsinks. The typical weight of the module is around 1250 grams, which is reasonable for its power-handling capability. This mechanical design ensures easy mounting, good thermal contact, and reliable electrical connections in industrial and power electronic systems.

2MBI1000VXB-170E-54 Manufacturer

The 2MBI1000VXB-170E-54 is an IGBT module manufactured by Fuji Electric, a global leader in power semiconductor technology. Established in 1923, Fuji Electric specializes in providing advanced power solutions across industries such as energy, industrial automation, and transportation.

Conclusion

In conclusion, the 2MBI1000VXB-170E-54 IGBT module by Fuji Electric offers excellent efficiency, robust performance, and versatile applications across various industrial sectors. If you're seeking reliable, high-performance components in bulk, the 2MBI1000VXB-170E-54 stands out as a solid choice for power electronics solutions that demand long-term reliability and efficiency.

Datasheet PDF

2MBI1000VXB-170E-54 Datasheets