The SKM100GB12T4G is a powerful and reliable IGBT module made by Semikron Danfoss. It is built with advanced technology to switch power efficiently and reduce energy loss. This module works well in motor drives, UPS systems, and welding machines. In this article, you’ll learn about its features, how it works, where it’s used, and why it’s a smart choice for many industrial applications.
The SKM100GB12T4G is a high-performance IGBT module from Semikron, designed with fourth-generation Trench IGBT technology and a soft-switching CAL4 diode to ensure efficient power switching and reduced EMI. Rated for 1200 V and up to 154 A, it features a positive temperature coefficient of VCEsat for easier parallel operation and superior thermal stability. Its robust short-circuit protection limits current to six times the nominal, making it highly reliable in fault-prone environments. Ideal for AC inverter drives, UPS systems, and electronic welders operating at frequencies up to 20 kHz, this module combines efficiency, durability, and performance. Design to operate in temperatures ranging from -40°C to 175°C, it stands out in demanding industrial applications. With its optimized switching behavior and rugged construction, the SKM100GB12T4G is a solid choice for those seeking long-term reliability.
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The SKM100GB12T4G is manufactured by Semikron Danfoss, a leading global supplier of power electronics components. Semikron, founded in 1951, merged with Danfoss in 2022 to form Semikron Danfoss, combining their expertise to advance semiconductor technology. The company specializes in developing and producing semiconductor components and systems for power conversion, offering a wide range of products including IGBT modules, rectifiers, and power assemblies. Their solutions are widely used in applications such as industrial drives, renewable energy systems, and electric vehicles. Semikron Danfoss is recognized for its innovation and commitment to quality, providing reliable and efficient products to meet the evolving demands of the power electronics industry.
This circuit diagram for the SKM100GB12T4G module shows a dual IGBT half-bridge configuration with two insulated-gate bipolar transistors (IGBTs), each integrated with a freewheeling diode. Terminal 1 is the positive DC bus, serving as the common collector connection for both IGBTs. Terminals 2 and 3 are the emitter outputs of each IGBT, forming the two output legs of the half-bridge. The IGBTs are driven through gate-emitter pairs: 4/5 for the left IGBT and 6/7 for the right one. Each IGBT is protected by an antiparallel diode, which enables current flow during switching events when the IGBT is off, improving performance in inductive load applications.
This configuration is commonly used in inverter circuits, motor drives, and power converters. It allows for efficient switching and current handling, enabling control over power delivery in both directions while minimizing losses.
• Advanced IGBT4 Technology: Incorporates Semikron's fourth-generation trench IGBT, delivering enhanced efficiency and performance.
• Soft Switching CAL4 Diode: Equipped with a soft-switching fourth-generation CAL diode, reducing switching losses and electromagnetic interference (EMI).
• Isolated Copper Baseplate: Utilizes Direct Bonded Copper (DBC) technology for improved thermal management and electrical isolation.
• Integrated Gate Resistor: Features an internal gate resistor to optimize switching behavior and simplify circuit design.
• High Power Cycling Capability: Designed for increased durability under repetitive load cycles, ensuring long-term reliability.
• UL Recognition: Certified under UL file number E63532, affirming compliance with stringent safety standards.
• AC Inverter Drives: Facilitates precise control of AC motor speed and torque, enhancing the efficiency of industrial motor drives.
• Uninterruptible Power Supplies (UPS): Ensures continuous power delivery during mains power interruptions, safeguarding critical systems from downtime.
• Electronic Welders: Optimized for welding applications operating at switching frequencies up to 20 kHz, providing stable and efficient performance.
This outline drawing of the SKM100GB12T4G IGBT module provides detailed mechanical dimensions critical for installation and integration into power electronic systems. The module has an overall length of 106.4 mm, a width of 61.4 mm, and a height of approximately 30.5 mm, making it a compact package suitable for high-power applications. Terminal layout is clearly marked, with terminals 1, 2, and 3 positioned for easy access, spaced 22.5 mm apart, and designed for M6 screws to ensure secure electrical connections.
Mounting holes are located at each corner, with dimensions that facilitate firm attachment to a heat sink or chassis, ensuring good thermal contact. The bottom layout includes gate and emitter connections labeled and spaced for accurate PCB or wire interface.
• High Efficiency: Thanks to its advanced Trench IGBT4 technology and CAL4 soft-switching diode, it delivers reduced switching and conduction losses.
• Improved Thermal Management: The isolated DBC baseplate provides excellent heat dissipation, supporting stable operation even under high loads.
• Enhanced Reliability: Its robust short-circuit capability and high power cycling performance ensure long-term durability in demanding conditions.
• Simplified Design Integration: Features like the built-in gate resistor and positive temperature coefficient of VCEsat allow for easier parallel operation and circuit optimization.
• Compact and Versatile: The compact SEMITOP 3 housing saves board space while being suitable for a variety of applications, including inverters, UPS systems, and welders.
• Safety Certified: UL-recognized, ensuring compliance with global safety standards.
Parameter
Name |
Value and
Unit |
Collector-Emitter Voltage (VCES) |
1200 V |
Continuous Collector Current at TC =
25 °C (IC) |
154 A |
Continuous Collector Current at TC
= 80 °C (IC) |
118 A |
Nominal Collector Current (ICnom) |
100 A |
Repetitive Peak Collector Current (ICRM) |
300 A |
Gate-Emitter Voltage (VGES) |
±20 V |
Short Circuit Withstand Time (tpsc) |
10 µs |
IGBT Junction Temperature Range (Tj) |
-40 to 175 °C |
Continuous Forward Current at Tj
= 175 °C (IF) |
118 A |
Continuous Forward Current at Tj
= 25 °C (IF) |
89 A |
Nominal Forward Current (IFnom) |
100 A |
Repetitive Peak Forward Current (IFRM) |
300 A |
Surge Forward Current (IFSM),
(tp = 10 ms, sin 180°) |
486 A |
Diode Junction Temperature Range (Tj) |
-40 to 175 °C |
RMS Isolation Voltage (Tterminal
= 80 °C) (It(RMS)) |
500 V |
Storage Temperature Range (Tstg) |
-40 to 125 °C |
Isolation Voltage (AC sinus 50 Hz,
1 min) (Visol) |
4000 V |
• Overheating During Operation: Ensure proper heatsinking and thermal interface materials to prevent temperature rise from inadequate cooling.
• Gate Drive Failure: Avoid gate voltage exceeding ±20V and use recommended gate resistors to protect the gate drive circuitry.
• Short Circuit or Overcurrent: Incorporate fast current protection circuits and limit switching frequency to prevent device stress.
• Collector-Emitter Breakdown: Use snubber circuits and maintain voltage within rated 1200V to avoid breakdown during switching.
• Parasitic Oscillations: Optimize PCB layout with short, low-inductance paths to eliminate gate loop oscillations.
The SKM100GB12T4G and SKM100GB12T4 are both high-performance IGBT modules from Semikron Danfoss, designed with Trench IGBT4 technology and a voltage rating of 1200V. Each supports a collector current of 154 A at 25°C and 118 A at 80°C, and both are suitable for switching frequencies up to 20 kHz. They share the same SEMITOP 3 package type and use Direct Bonded Copper (DBC) baseplates for efficient thermal management. However, the SKM100GB12T4G features an internal gate resistor, simplifying gate drive design and enhancing switching performance. It also includes an improved CAL4 diode, which is optimized for reduced EMI and lower switching losses. In contrast, the SKM100GB12T4 lacks an internal gate resistor, requiring external tuning, and uses a standard CAL diode, making it slightly less optimized in EMI control. Both modules are UL certified, but the T4G variant (UL E63532) offers improved integration for designers.
• Regular Visual Inspection
Check for signs of physical damage, discoloration, or residue on the module, terminals, and surrounding PCB. Replace if any cracks or burns are detected.
• Clean Connection Terminals
Periodically clean the collector, emitter, and gate terminals using non-abrasive, electronics-safe solvents to ensure low contact resistance and stable performance.
• Monitor Thermal Interface
Ensure the thermal paste or pad between the module and heatsink remains effective. Reapply or replace if it shows signs of drying or degradation.
• Check for Loose Mounting
Verify that the module is securely mounted to the heatsink. Loose mounting can lead to poor thermal contact and overheating.
• Test Gate Drive Circuitry
Routinely inspect and test the gate drive voltage and signals. Inconsistent gate drive may cause switching faults or increased losses.
• Environmental Protection
Protect the module from excessive dust, moisture, and corrosive gases by using conformal coatings or placing it in a controlled enclosure.
The SKM100GB12T4G is a strong, high-performance IGBT module that offers safe, efficient, and reliable operation. It is easy to use, has great thermal control, and works well in many power systems. Compared to similar models, it offers better design and less EMI. If you’re looking for a trusted power module, this one is a great option. Buy in bulk today to get the best value and supply.
2025-03-31
2025-03-31
The SKM100GB12T4G is used in AC inverter drives, uninterruptible power supplies (UPS), and electronic welders for efficient power control.
It is manufactured by Semikron Danfoss, a global leader in power electronics components.
It has a voltage rating of 1200 V and supports up to 154 A at 25°C.
It features Trench IGBT4 technology and a CAL4 soft-switching diode, which reduce power losses and electromagnetic interference.
Yes, it comes with a built-in gate resistor, which helps simplify design and improve switching performance.
The module uses a DBC (Direct Bonded Copper) baseplate for excellent heat dissipation and stable operation.
It measures 106.4 mm x 61.4 mm x 30.5 mm, making it compact and suitable for tight spaces.
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