Everything You Need to Know About the MG75Q1BS11 Toshiba
2025-03-31 217

The MG75Q1BS11 is a high-quality IGBT module made by Toshiba, designed for controlling motors and handling high power. It works fast, saves energy, and is built to last. This article explains its features, how it works, where it’s used, and why it’s a great choice for industrial systems.

Catalog

MG75Q1BS11 Overview

The MG75Q1BS11 is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor), designed for demanding motor control and high-power switching applications. It combines the efficiency of IGBT technology with the fast switching capabilities of a power MOSFET, making it ideal for use in industrial drives, inverters, and automation systems. This module offers excellent power handling, efficient energy conversion, and improved system reliability. With fast switching speeds and low power loss, it helps optimize performance in energy-intensive environments. The MG75Q1BS11 is widely trusted for its durability and effectiveness in industrial operations, where consistent and efficient control is critical. Buyers looking for a reliable solution for large-scale industrial systems can benefit from its proven design and availability through global suppliers.

For OEMs, repair services, and distributors, now is the perfect time to place your bulk orders and secure a dependable component for your power electronics needs.

MG75Q1BS11 Equivalent Circuit

This equivalent circuit diagram for the MG75Q1BS11 represents an Insulated Gate Bipolar Transistor (IGBT) module, which combines the features of both MOSFETs and bipolar transistors. In this circuit, G(B) represents the gate (or base), C is the collector, and E is the emitter. The symbol used clearly shows that the device operates as an IGBT, which is controlled via the gate terminal. When a voltage is applied between the gate and emitter, it enables current flow between the collector and emitter. The gate input requires only a small voltage to trigger conduction, making the IGBT energy-efficient and suitable for high-speed switching applications such as inverters, motor drives, and power supplies. The diagram helps engineers visualize the basic switching function of the MG75Q1BS11 and how it integrates into broader power electronic systems.

MG75Q1BS11 Features

• High Input Impedance: Facilitates easy drive requirements, allowing for efficient interfacing with control circuits.

• High-Speed Switching: Ensures rapid response times, with a fall time (tf) of 1.0µs (maximum), enhancing overall system performance.

• Low Saturation Voltage: Reduces conduction losses, improving efficiency in power conversion applications.

• Robust Design: Design to withstand high voltage and current stresses, ensuring reliability in demanding environments.

MG75Q1BS11 Applications

• Industrial Motor Drives: Utilized in variable frequency drives (V_FDs) and servo drives to control the speed and torque of electric motors in industrial machinery.

• HVAC Systems: Used in variable speed compressors and fans within heating, ventilation, and air conditioning systems for energy-efficient operation.​

MG75Q1BS11 Outline Drawing

This outline drawing of the MG75Q1BS11 provides detailed dimensional specifications for the physical packaging of the IGBT module. The module has a rectangular footprint with a width of 53 mm and a length of 33 mm, both with tolerances of ±0.5 mm. The total height is approximately 32 mm, ensuring a compact form factor suitable for space-constrained applications.

Mounting is facilitated through three M4 screw holes, and additional alignment holes (Ø2.2 mm) are included to ensure secure installation. The terminal spacing and heights are precisely defined—critical for proper electrical connection and heat dissipation. The connector terminals rise to a height of 29 mm, with specific distances marked for alignment and assembly.

MG75Q1BS11 Maximum Ratings

Parameter Name (Symbol)	Value and Unit
Collector-Emitter Voltage (VCES)	1200 V
Gate-Emitter Voltage (VGES)	±20 V
Continuous Collector Current (IC)	75 A
Pulsed Collector Current, 1ms (ICP)	150 A
Collector Power Dissipation at Tc = 25°C (PC)	300 W
Junction Temperature (Tj)	150 °C
Storage Temperature Range (Tstg)	-40 to +125 °C
Isolation Voltage (Visol) (AC, 1 minute)	2500 V
Screw Torque (Terminal / Mounting)	2 / 3 N·m

MG75Q1BS11 Electrical Characterisitics

Parameter Name (Symbol)	Value and Unit
Gate Leakage Current (IGES)	±500 nA
Collector Cut-off Current (ICES)	1.0 mA
Collector-Emitter Voltage (VCES)	1200 V
Gate-Emitter Cut-off Voltage (VGE(OFF))	3.0 – 6.0 V
Collector-Emitter Saturation Voltage (VCE(sat))	2.3 – 2.7 V
Input Capacitance (Cies)	10500 pF
Rise Time (tr)	0.3 – 0.6 µs
Turn-on Time (ton)	0.4 – 0.8 µs
Fall Time (tf)	0.6 – 1.0 µs
Turn-off Time (toff)	1.2 – 1.6 µs
Thermal Resistance, Junction to Case (Rth(j-c))	0.41 °C/W

MG75Q1BS11 Benefits

• High Efficiency: Thanks to its low saturation voltage and fast switching capabilities, the module minimizes energy losses during operation, leading to better overall efficiency.

• Reduced Drive Requirements: With high input impedance, it simplifies the design of gate drive circuits, allowing for easier integration into systems.

• Improved System Performance: Its fast response time enhances the accuracy and performance of motor control and switching applications.

• Compact and Reliable: The robust design ensures long-term reliability even under high voltage and current stress, reducing maintenance needs.

• Cost-Effective Solution: Offers a good balance of performance and price, making it an economical choice for OEMs and industrial users.

• Versatile Use: Suitable for a wide range of applications such as inverters, power converters, and motor drives, increasing its adaptability.

MG75Q1BS11 Common Issues and Solution

• Overheating: Prevent thermal damage by using efficient heatsinks, thermal pads, and active cooling systems to manage excess heat.

• Gate Drive Failure: Ensure stable operation by using a properly rated and isolated gate driver that meets the IGBT’s control requirements.

• Short Circuit or Overcurrent Conditions: Protect the module from sudden current spikes with fast-acting fuses, soft-start circuits, or current-limiting components.

• Parasitic Oscillations: Minimize switching noise and instability by optimizing PCB layout and adding snubber circuits or ferrite beads.

• Solder Joint or Connector Failures: Avoid mechanical and thermal fatigue by using industrial-grade soldering and securing the module against vibration or stress.

MG75Q1BS11 Alternatives Products

Comparison: MG75Q1BS11 vs MG75Q2YL1

The MG75Q1BS11 and MG75Q2YL1 are both high-power IGBT (Insulated Gate Bipolar Transistor) modules designed for demanding industrial applications, particularly in motor drives and power switching systems. The MG75Q1BS11, manufactured by Toshiba, is well-established for its reliable performance, fast switching speed, and efficient thermal management—making it a popular choice in automation and inverter systems. On the other hand, the MG75Q2YL1 is also categorized as a power transistor module, though its manufacturer details are less commonly cited in available sources. Both modules are readily available from global suppliers and are suitable for similar high-power switching environments. However, the MG75Q1BS11 benefits from broader documentation and trusted brand backing, which may offer added confidence in long-term support and integration. For a precise comparison based on electrical characteristics such as voltage ratings, current capacity, and thermal resistance, users should consult the respective datasheets. This will help in choosing the right module tailored to specific design requirements.

MG75Q1BS11 Manufacturer

The MG75Q1BS11 is made by Toshiba Corporation, established in 1875 and headquartered in Tokyo, Japan, is a global leader in diversified electronics and electrical equipment. The company operates across various sectors, including energy systems, social infrastructure, electronic devices, and digital solutions. Toshiba is renowned for its innovation and quality, offering a wide range of products such as semiconductors, storage devices, and industrial systems. The MG75Q1BS11 is among Toshiba's high-performance Insulated Gate Bipolar Transistor (IGBT) modules, reflecting the company's commitment to delivering reliable components for high-power applications.

Conclusion

The MG75Q1BS11 is a strong, reliable, and efficient IGBT module for power control and motor drive systems. Made by Toshiba, it’s easy to use, works well in tough environments, and is trusted by many industries. If you need a dependable power module, now is a good time to order in bulk.

Datasheet PDF

MG75Q1BS11 Datasheets: