SI6913DQ-T1-GE3 | |
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Part Number | SI6913DQ-T1-GE3 |
Manufacturer | Vishay Siliconix |
Description | MOSFET 2P-CH 12V 4.9A 8-TSSOP |
Quantity Available | 17500 pcs new original in stock. Request Stock & Quotation |
ECAD Model | |
Datasheets | 1.SI6913DQ-T1-GE3.pdf2.SI6913DQ-T1-GE3.pdf3.SI6913DQ-T1-GE3.pdf |
Download | SI6913DQ-T1-GE3 Details PDF |
SI6913DQ-T1-GE3 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
Technical Information of SI6913DQ-T1-GE3 | |||
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Manufacturer Part Number | SI6913DQ-T1-GE3 | Category | |
Manufacturer | Vishay / Siliconix | Description | MOSFET 2P-CH 12V 4.9A 8-TSSOP |
Package / Case | 8-TSSOP | Quantity Available | 17500 pcs |
Vgs(th) (Max) @ Id | 900mV @ 400µA | Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-TSSOP | Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 21mOhm @ 5.8A, 4.5V | Power - Max | 830mW |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | - | Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4.9A | Configuration | 2 P-Channel (Dual) |
Base Product Number | SI6913 | ||
Download | SI6913DQ-T1-GE3 PDF - DE.pdfSI6913DQ-T1-GE3 PDF - ES.pdfSI6913DQ-T1-GE3 PDF - IT.pdfSI6913DQ-T1-GE3 PDF - KR.pdfSI6913DQ-T1-GE3 PDF - FR.pdf |
SI6913DQ-T1-GE3
P-Channel MOSFET Array
Vishay / Siliconix
Logic Level Gate
Dual P-Channel MOSFET
TrenchFET Technology
High continuous drain current of 4.9A at 25°C
Low Rds(on) of 21 mOhm at 5.8A, 4.5V
Supports a wide operating temperature range -55°C to 150°C
Drain to Source Voltage (Vdss) 12V
Gate-Source Threshold Voltage (Vgs th) 900mV at 400 µA
Gate Charge (Qg) 28nC at 4.5V
8-TSSOP (0.173", 4.40mm Width)
Digi-Reel packaging format for flexible order quantities
Lead-free and RoHS Compliant for environmental safety
Proven TrenchFET technology for enhanced performance
Energy-efficient design with low on-resistance
High reliability and robustness in various temperature ranges
Ideal for power management applications
Suitable for portable and space-constrained electronic designs
Compatible with logic-level gate drive circuits
RoHS compliant indicating restriction of hazardous substances
Durable construction suitable for long-term use in electronic devices
Power regulation in computing and telecom equipment
Battery management systems
Load switch applications
Power conversion in consumer electronics
SI6913DQ-T1-GE3 Stock | SI6913DQ-T1-GE3 Price | SI6913DQ-T1-GE3 Electronics | |||
SI6913DQ-T1-GE3 Components | SI6913DQ-T1-GE3 Inventory | SI6913DQ-T1-GE3 Digikey | |||
Supplier SI6913DQ-T1-GE3 | Order SI6913DQ-T1-GE3 Online | Inquiry SI6913DQ-T1-GE3 | |||
SI6913DQ-T1-GE3 Image | SI6913DQ-T1-GE3 Picture | SI6913DQ-T1-GE3 PDF | |||
SI6913DQ-T1-GE3 Datasheet | Download SI6913DQ-T1-GE3 Datasheet | Manufacturer Vishay / Siliconix |
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