SI4126DY-T1-GE3
Part Number SI4126DY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 39A 8SO
Quantity Available 10400 pcs new original in stock.
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Datasheets 1.SI4126DY-T1-GE3.pdf2.SI4126DY-T1-GE3.pdf3.SI4126DY-T1-GE3.pdf4.SI4126DY-T1-GE3.pdf
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Technical Information of SI4126DY-T1-GE3
Manufacturer Part Number SI4126DY-T1-GE3 Category  
Manufacturer Vishay / Siliconix Description MOSFET N-CH 30V 39A 8SO
Package / Case 8-SOIC Quantity Available 10400 pcs
Vgs(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package 8-SOIC
Series TrenchFET® Rds On (Max) @ Id, Vgs 2.75mOhm @ 15A, 10V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc) Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 4405 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Base Product Number SI4126  
DownloadSI4126DY-T1-GE3 PDF - DE.pdf
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