Product Model

SI2308BDS-T1-E3

Introduction

N-Channel MOSFET designed for high-speed switching applications

Brand and Manufacturer

Vishay / Siliconix

Features

High density cell design for low RDS(on)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

Product Performance

Fast switching speeds

Low gate charge

High performance at high temperatures

Efficient power handling capabilities

Technical Specifications

FET Type: N-Channel

Drain to Source Voltage (Vdss): 60V

Current - Continuous Drain (Id) @ 25°C: 2.3A

Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Vgs (Max): ±20V

Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)

Dimensions, Shape, and Packaging

Package / Case: TO-236-3, SC-59, SOT-23-3

Packaging: Digi-Reel

Supplier Device Package: SOT-23-3 (TO-236)

Quality and Reliability

Operates in temperatures ranging from -55°C to 150°C

Highly reliable under thermal stress

Product Advantages

Low on-resistance

High thermal and electrical efficiency

Compact size for space-sensitive applications

Product Competitiveness

Highly competitive in power dissipation and switching speeds among similar devices

Strong performance-to-cost ratio

Compatibility

Compatible with high-speed switch circuits

Easily integrated into various electronic systems due to SOT-23-3 package standard

Standard Certification and Compliance

Meets industry standards for quality and performance

RoHS compliant

Lifespan and Sustainability

Durable and designed for long-term use

Environmentally friendly materials and processes

Actual Application Fields

Power management

Load switch

Battery management

Converters and inverters in consumer electronics and telecom devices

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