Product Model

THGBM1G4D1EBAI7

Introduction

High-density NAND flash memory

Brand and Manufacturer

Toshiba Semiconductor and Storage

Features

High-speed read/write capabilities

ECC and wear leveling support

Low power consumption

Product Performance

Sustained high throughput for data-intensive applications

Durable under extreme environmental conditions

Efficient error handling mechanisms

Technical Specifications

Type: NAND flash memory

Interface: Standardized flash memory interface

Density: 4Gb

Dimensions, Shape, and Packaging

Package Type: Ball Grid Array (BGA)

Compact form factor

Robust physical protection

Quality and Reliability

High manufacturing standards

Extensive durability testing

Consistent performance over time

Product Advantages

Enhanced data security features

Optimized for portable and embedded applications

Product Competitiveness

Competitive pricing in flash memory market

Superior performance in read/write speed compared to peers

Compatibility

Wide compatibility with standard memory interfaces

Suitable for various electronic devices and systems

Standard Certification and Compliance

Meets international semiconductor standards

Compliant with environmental regulations

Lifespan and Sustainability

Long operational lifespan

Designed for reduced environmental impact

Actual Application Fields

Mobile devices

Digital cameras

Embedded systems

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