K4B2G1646F-BHMA02V
Part Number K4B2G1646F-BHMA02V
Manufacturer SAMSUNG
Description
Quantity Available 2000 pcs new original in stock.
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Technical Information of K4B2G1646F-BHMA02V
Manufacturer Part Number K4B2G1646F-BHMA02V Category Integrated Circuits (ICs)
Manufacturer Samsung Semiconductor Description
Package / Case BGA Quantity Available 2000 pcs
Condtion New Original Stock Warranty 100% Perfect Functions
Lead Time 2-3days after payment. Payment PayPal / Telegraphic Transfer / Western Union
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Product Model

K4B2G1646F-BHMA02V

Introduction

DDR3 SDRAM Integrated Circuit

Brand and manufacturer

Samsung Semiconductor

Features

2 Gb DDR3 memory

High-speed synchronous DRAM

Low power consumption

Lead-free and RoHS compliant

Product performance

1600 Mbps/pin data transfer rate

Internal pipelined operation for performance

Bi-directional differential data strobe

Technical specifications

64M x 16 organization

Supply Voltage: 1.35V / 1.5V

JEDEC standard 1.5V (1.425V ~1.575V) power supply

Dimensions, shape, and packaging

78-ball FBGA package

0 x 11.5 x 1.2 mm package dimensions

Surface mount technology

Quality and reliability

Meets Samsung's stringent quality standards

Product advantages

Enhanced bandwidth for high-performance computing

Energy-efficient design for reduced power costs

Product competitiveness

Competitive in performance-intensive applications

Compatibility

Compatible with JEDEC standards

Supports DDR3 interface

Standard certification and compliance

JEDEC compliant

Lead-free and RoHS compliant

Lifespan and sustainability

Extended operational lifespan typical of Samsung memory products

Built with sustainable materials

Actual application fields

Computing

Server

Networking

Telecommunications

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