Product Model

K9F4G08U0E-SIB0T

Introduction

Samsung K9F4G08U0E-SIB0 NAND Flash Memory

Brand and Manufacturer

Samsung Semiconductor

Features

High-Density NAND Flash Storage

Single-Level Cell (SLC) Technology

Fast Read and Write Capabilities

ECC (Error Correction Code) Support

Support for Bad Block Management

Product Performance

High-Speed Programming

High Endurance and Reliability

Low Power Consumption

Technical Specifications

4Gb (Gigabit) Density

x8 I/O Interface

7V to 3.6V Supply Voltage Range

Operating Temperature Range: -40°C to +85°C

Dimensions, Shape, and Packaging

TSOP1 Package

48-Pin Standard Package

Width: 12mm, Length: 20mm, Height: 1.2mm

Quality and Reliability

MTBF (Mean Time Between Failures) Support

Extended Operating Temperature Range

Quality Assurance with Samsung's Rigorous Testing Protocols

Product Advantages

Large Memory Capacity for Storage Applications

Reliable Data Retention

Fast Access Speed Beneficial for Rapid Data Manipulation

Product Competitiveness

High-Performance Flash Memory

Reputation for Durability and Longevity

Widely Used in the Market

Compatibility

Compatible with Standard NAND Flash Memory Controllers

Standard Certification and Compliance

RoHS Compliant

Meets Industry Standard Specifications

Lifespan and Sustainability

Designed for Long-Term Reliability

Capable of a High Number of Program/Erase Cycles

Actual Application Fields

Solid State Drives (SSDs)

Embedded Systems

Digital Cameras and MP3 Players

Mobile Devices and Smartphones

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