Product Model

K4B4G3146C-SYF8

Introduction

High-performance DDR3 SDRAM IC

Brand and Manufacturer

Samsung Semiconductor

Features

High data transfer rates

Low power consumption

8 internal banks for simultaneous operations

Product Performance

Supports data rates of up to 1866 Mbps

Temperature-compensated self-refresh (TCSR)

Programmable CAS latency and burst length

Technical Specifications

DDR3 SDRAM technology

Data Width: 4 bits

Memory size: 4 Gb

Dimensions, Shape, and Packaging

Ball Grid Array (BGA) package

Low-profile for compact installations

Quality and Reliability

Extended temperature range operation

High durability under continuous data usage

JEDEC compliance for reliability standards

Product Advantages

Optimized for high-speed computing applications

Enhanced thermal characteristics for better stability

Product Competitiveness

Industry-leading performance in DDR3 category

Widely used in both consumer and industrial markets

Compatibility

Compatible with standard DDR3 SDRAM sockets

Meets standard voltage and timing specifications for interoperability

Standard Certification and Compliance

JEDEC standard compliant

RoHS compliant for environmental safety

Lifespan and Sustainability

Designed for long-term reliability

Supports power saving modes to extend lifespan and reduce environmental impact

Actual Application Fields

Consumer electronics

Computing devices

Networking hardware

Embedded systems

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