Product Model

BKO-CA1425-H03

Introduction

Insulated Gate Bipolar Transistor (IGBT) Module

Brand and Manufacturer

Micron Technology

Features

High-frequency switching

Low on-state voltage drop

High input impedance

Fast recovery time

Integrated gate drive

Product Performance

High current handling capacity

Optimized for minimal thermal resistance

Excellent ruggedness

Low conduction losses

Enhanced performance at high temperatures

Technical Specifications

Collector-Emitter breakdown voltage

Gate-Emitter threshold voltage

Collector current rating

Switching times

Thermal resistance parameters

Dimensions, Shape, and Packaging

Standard module size

Rectangular form factor

Industry-standard packaging for IGBT modules

Quality and Reliability

Consistent manufacturing process

Stringent quality control measures

High MTBF (Mean Time Between Failures)

Product Advantages

Energy-efficient

Robust against fast switching and voltage spikes

Reduced electromagnetic interference (EMI)

Product Competitiveness

Competitive pricing

Superior performance in its class

Good reputation of the manufacturer

Compatibility

Compatible with standard gate drive circuits

Designed for easy integration in various applications

Standard Certification and Compliance

Meets industry-standard certifications

Compliant with environmental regulations

Lifespan and Sustainability

Long operational life

Can be recycled following electronics waste guidelines

Actual Application Fields

Electric vehicles (EVs)

Power supplies and inverters

Industrial motor drives

Renewable energy systems (solar, wind)

High-power electronics

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