| IAUC120N04S6L005ATMA1 | |
|---|---|
| Part Number | IAUC120N04S6L005ATMA1 |
| Manufacturer | Infineon Technologies |
| Description | IAUC120N04S6L005ATMA1 |
| Quantity Available | 5050 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | |
| IAUC120N04S6L005ATMA1 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IAUC120N04S6L005ATMA1 | |||
|---|---|---|---|
| Manufacturer Part Number | IAUC120N04S6L005ATMA1 | Category | |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | IAUC120N04S6L005ATMA1 |
| Package / Case | PG-TDSON-8-53 | Quantity Available | 5050 pcs |
| Vgs(th) (Max) @ Id | 2V @ 130µA | Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | PG-TDSON-8-53 |
| Series | Automotive, AEC-Q101, OptiMOS™ | Rds On (Max) @ Id, Vgs | 0.55mOhm @ 60A, 10V |
| Power Dissipation (Max) | 187W (Tc) | Package / Case | 8-PowerTDFN |
| Package | Tape & Reel (TR) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 11203 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Base Product Number | IAUC120 |
Product Model
IAUC120N04S6L005ATMA1
Introduction
High-performance N-Channel MOSFET designed for power regulation and switching
Brand and Manufacturer
International Rectifier (Infineon Technologies)
Features
N-Channel MOSFET, ideal for high efficiency power regulation
Supports surface mount technology for compact assembly
Enhanced thermal management with PowerTDFN 8-package
Robust against repetitive avalanche events
Product Performance
Can handle continuous drain currents up to 120A at 25°C
Operates efficiently within a temperature range of -55°C to 175°C
Low on-resistance of 0.55mOhm at 60A and 10V, minimizing power losses
High gate charge and input capacitance facilitate rapid switching
Technical Specifications
Drain to Source Voltage (Vdss): 40V
Continuous Drain Current (Id): 120A
On-resistance (Rds On): 0.55mOhm
Gate Threshold Voltage (Vgs(th)): 2V
Gate Charge (Qg): 177 nC
Input Capacitance (Ciss): 11203 pF
Drive Voltage: 4.5V to 10V
Maximum Gate Source Voltage (Vgs Max): ±16V
Dimensions, Shape, and Packaging
8-PowerTDFN package
Compact surface mount form (PG-TDSON-8-53)
Quality and Reliability
Built to withstand harsh environments and high thermal demands
Designed for long-term reliability in high-performance applications
Product Advantages
High current capacity and low heat generation
Optimized for high-density power applications
Product Competitiveness
Competes effectively in markets requiring high efficiency and reliability in power regulation
Compatibility
Compatible with various high-performance power regulation circuits
Standard Certification and Compliance
Meets industry standards for performance and safety
Lifespan and Sustainability
Designed for durability and long operational life under stringent conditions
Actual Application Fields
Suitable for power supplies, DC-DC converters, motor drives, and other high-power applications
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