SPW17N80C3 | |
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Part Number | SPW17N80C3 |
Manufacturer | Infineon Technologies |
Description | SPW17N80C3 Infineon Technologies |
Quantity Available | 2144 pcs new original in stock. Request Stock & Quotation |
ECAD Model | |
Datasheets | SPW17N80C3.pdf |
Download | SPW17N80C3 Details PDF |
SPW17N80C3 Price |
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Technical Information of SPW17N80C3 | |||
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Manufacturer Part Number | SPW17N80C3 | Category | Discrete Semiconductor |
Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | SPW17N80C3 Infineon Technologies |
Package / Case | TO-247-3 | Quantity Available | 2144 pcs |
Vgs(th) (Max) @ Id | 3.9V @ 1mA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO247-3 |
Series | CoolMOS™ | Rds On (Max) @ Id, Vgs | 290 mOhm @ 11A, 10V |
Power Dissipation (Max) | 227W (Tc) | Packaging | Tube |
Package / Case | TO-247-3 | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 177nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V | Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Download | SPW17N80C3 PDF - DE.pdfSPW17N80C3 PDF - FR.pdfSPW17N80C3 PDF - ES.pdfSPW17N80C3 PDF - IT.pdfSPW17N80C3 PDF - KR.pdf |
SPW17N80C3
High voltage power MOSFET
International Rectifier (Infineon Technologies)
N-Channel MOSFET
Through-hole mounting
CoolMOS technology for improved efficiency
Suitable for high voltage applications
Maximum drain-source voltage of 800V
Continuous drain current of 17A at 25°C
Maximum power dissipation of 227W
Low on-resistance of 290 mOhm
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Gate threshold voltage up to 3.9V at 1mA
Gate charge maximum of 177nC at 10V
Input capacitance of 2320pF at 25V
TO-247-3 package
Packaged in tubes for distribution
Robust thermal management
High reliability in extreme temperature conditions from -55°C to 150°C
High voltage handling capability
Energy efficient due to low on-state resistance
Competitive in power management and high voltage applications
Preferred for its thermal and electrical performance
Compatible with standard high voltage switching applications
Flexible drive voltage requirements (10V max)
Complies with standard semiconductor industry regulations
Designed for long-term reliability under harsh environmental conditions
Power supply units
Switching regulators
Motor drives
Power management in computing and telecommunication systems
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SPW17N80C3 Datasheet | Download SPW17N80C3 Datasheet | Manufacturer Cypress Semiconductor (Infineon Technologies) |