| SPA11N80C3 | |
|---|---|
| Part Number | SPA11N80C3 |
| Manufacturer | Infineon Technologies |
| Description | SPA11N80C3 Infineon Technologies |
| Quantity Available | 9200 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | |
| Download | SPA11N80C3 Details PDF |
| SPA11N80C3 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of SPA11N80C3 | |||
|---|---|---|---|
| Manufacturer Part Number | SPA11N80C3 | Category | Discrete Semiconductor |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | SPA11N80C3 Infineon Technologies |
| Package / Case | TO220F | Quantity Available | 9200 pcs |
| Vgs(th) (Max) @ Id | 3.9V @ 680µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO220-FP |
| Series | CoolMOS™ | Rds On (Max) @ Id, Vgs | 450 mOhm @ 7.1A, 10V |
| Power Dissipation (Max) | 34W (Tc) | Packaging | Tube |
| Package / Case | TO-220-3 Full Pack | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800V | Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Download | SPA11N80C3 PDF - DE.pdfSPA11N80C3 PDF - ES.pdfSPA11N80C3 PDF - IT.pdfSPA11N80C3 PDF - KR.pdfSPA11N80C3 PDF - FR.pdf | ||
Product Model
SPA11N80C3
Introduction
High-voltage N-Channel MOSFET designed for high-efficiency power conversion applications.
Brand and Manufacturer
International Rectifier (Infineon Technologies)
Features
CoolMOS technology for reduced energy loss
High breakdown voltage (800V)
Low on-resistance (450 mOhm)
Through-hole package for easy mounting
Suitable for high-temperature operations up to 150°C
Product Performance
Can handle continuous drain current up to 11A at 25°C
Supports gate-source voltage up to ±20V
Features a maximum power dissipation of 34W
Operates efficiently with a gate charge of 85nC at 10V
Technical Specifications
FET Type: N-Channel MOSFET
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 450 mOhm at 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC at 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF at 100V
Drive Voltage (Max Rds On, Min Rds On): 10V
Dimensions, Shape, and Packaging
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Standard tube packaging for secure handling and storage
Quality and Reliability
Designed to meet stringent quality and reliability standards in industrial environments
Robust thermal management for extended lifespan
Product Advantages
High voltage capability and energy efficiency enhance overall system performance
Robust design suitable for demanding applications
Product Competitiveness
Competitively positioned in the high-voltage MOSFET market
Offers performance advantages over similar products in terms of efficiency and thermal management
Compatibility
Compatible with standard through-hole mounting techniques
Works with typical gate driving voltages used in high power applications
Standard Certification and Compliance
Complies with industry-standard specifications for safety and performance
Lifespan and Sustainability
Engineered for long-term reliability under high-stress conditions
Supports sustainable operations through energy-efficient performance
Actual Application Fields
Widely used in power supplies, inverters, and switching regulators
Suitable for applications requiring high voltage and power management like industrial drives and solar inverters
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