| IRLR3636PBF | |
|---|---|
| Part Number | IRLR3636PBF |
| Manufacturer | International Rectifier |
| Description | IRLR3636 - 12V-300V N-CHANNEL PO |
| Quantity Available | 20702 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | |
| Download | IRLR3636PBF Details PDF |
| IRLR3636PBF Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IRLR3636PBF | |||
|---|---|---|---|
| Manufacturer Part Number | IRLR3636PBF | Category | |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | IRLR3636 - 12V-300V N-CHANNEL PO |
| Package / Case | D-PAK | Quantity Available | 20702 pcs |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA | Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | D-Pak |
| Series | HEXFET® | Rds On (Max) @ Id, Vgs | 6.8mOhm @ 50A, 10V |
| Power Dissipation (Max) | 143W (Tc) | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package | Bulk | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 3779 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 4.5 V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Download | IRLR3636PBF PDF - DE.pdf | ||
Product Model
IRLR3636PBF
Introduction
High-power N-Channel HEXFET Power MOSFET
Brand and Manufacturer
International Rectifier, an Infineon Technologies company
Features
MOSFET (Metal Oxide) technology
N-Channel FET type
Surface mount
Product Performance
Maximum power dissipation of 143W at Tc
Continuous drain current of 50A at 25°C Tc
Low Rds On of 6.8 mOhm at 50A, 10V
Technical Specifications
Drain to Source Voltage (Vdss) of 60V
Vgs(th) maximum of 2.5V at 100µA
Gate Charge (Qg) maximum of 49nC at 4.5V
Input Capacitance (Ciss) maximum of 3779pF at 50V
Drive Voltage maximum Rds On of 4.5V, minimum Rds On of 10V
Vgs (Max) of ±16V
Dimensions, Shape, and Packaging
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Packaged in a tube
Quality and Reliability
Robust and reliable HEXFET technology
Product Advantages
High continuous current capacity
Efficient power dissipation for thermal management
Low gate charge for faster switching
Product Competitiveness
Strong performance metrics in its class
Good thermal performance with DPak package
Compatibility
Compatible with surface-mount technology (SMT)
Standard Certification and Compliance
Compliance with standard industry certifications and RoHS
Lifespan and Sustainability
Designed for longevity and reliability in various applications
Actual Application Fields
Suitable for power management applications such as DC/DC converters, motor drives, and high-efficiency power systems
Email us: Info@Ariat-Tech.com or RFQ IRLR3636PBF Online.
| IRLR3636PBF Stock | IRLR3636PBF Price | IRLR3636PBF Electronics | |||
| IRLR3636PBF Components | IRLR3636PBF Inventory | IRLR3636PBF Digikey | |||
| Supplier IRLR3636PBF | Order IRLR3636PBF Online | Inquiry IRLR3636PBF | |||
| IRLR3636PBF Image | IRLR3636PBF Picture | IRLR3636PBF PDF | |||
| IRLR3636PBF Datasheet | Download IRLR3636PBF Datasheet | Manufacturer Cypress Semiconductor (Infineon Technologies) | |||
| Related parts for IRLR3636PBF | |||||
|---|---|---|---|---|---|
| Image | Part Number | Description | Manufacturer | Get a Quote | |
 |
IRLR3705 | INFINEON | |||
 |
IRLR3410TRRPBF | MOSFET N-CH 100V 17A DPAK | Infineon Technologies | ||
|
IRLR3636TRLPBF | MOSFET N-CH 60V 50A DPAK | Infineon Technologies | ||
|
IRLR3636TRPBF | MOSFET N-CH 60V 50A DPAK | Infineon Technologies | ||
 |
IRLR3410TRPBF. | IRLR3410TRPBF. IR | IR | ||
|
IRLR3410TRPBF | MOSFET N-CH 100V 17A DPAK | Infineon Technologies | ||
|
IRLR3410TRPBF IC | IR TO-252 | IR | ||
|
IRLR3705TRPBF | INFINEON TO-252 | INFINEON | ||
|
IRLR3705ZPBF | HEXFET POWER MOSFET | International Rectifier | ||
|
IRLR3410TRRPBF MOS | IR TO-252-3 | IR | ||
|
IRLR3410TRLPBF MOS | IR TO252 | IR | ||
|
IRLR3705ZTRPBF | MOSFET N-CH 55V 42A DPAK | Infineon Technologies | ||
|
IRLR3410TRR | MOSFET N-CH 100V 17A DPAK | Infineon Technologies | ||
|
IRLR3636 | IRLR3636 IR | IR | ||
|
IRLR3705Z LR3705Z | IR TO-252 | IR | ||
|
IRLR3410TRPBF MOS | VBSEMI TO-252 | VBSEMI | ||
|
IRLR3705Z IC | IR TO-252 | IR | ||
|
IRLR3705ZPBF MOS | IR TO252 | IR | ||
|
IRLR3410TRLPBF. | IR TO-252 | IR | ||
|
IRLR3705Z | MOSFET N-CH 55V 42A DPAK | Infineon Technologies | ||
News
More
Microchip’s PolarFire® SoC FPGA has received AEC-Q100 certification, confirming its reliability under harsh automotive conditions, including operati...
The PSOCTM 4000T is Infineon's first product to feature the company's fifth-generation CAPSENSE™ technology and Multi-Sense functionality. This sensi...
An auto parts supplier executive revealed that EV development in the North American market has stalled as automakers choose to extend the lifespan of ...
Infineon and Eatron are expanding their AI battery management system (BMS) collaboration into industrial and consumer electronics. Based on Infineon’...
ON Semiconductor recently announced the launch of its first real-time, indirect time-of-flight (iToF) sensor, the Hyperlux ID series, which can perfor...
New Products
More
PD30 Series Photoelectric Sensor Carlo Gavazzi’s miniature photoelectric sensors are high-performan...
XC112/XR112 Evaluation Kit for the A111 Pulsed Coherent RadarAcconeer's XC112 and XR112 evaluation kit with flat flexible cables and support for up to...
MINAS A6 Series Servo Drives and Motors Panasonic's MINAS A6 family assures stable operation by supp...
UV LED Driver Board RayVio’s UV LED driver board for XE and XP1 series of UV-C emitters RayVio&rs...
Industrial and Extended Test DDR SDRAM Insignis' DDR SDRAM devices guarantee operation at elevated j...
Email: Info@ariat-tech.comHK TEL: +00 852-30501966ADD: Rm 2703 27F Ho King Comm Center 2-16,
Fa Yuen St MongKok Kowloon, Hong Kong.
Copyright Notice © 1996-2025 ARIAT TECHNOLOGY LIMITED. All rights reserved.