| IRFS4010-7PPBF | |
|---|---|
| Part Number | IRFS4010-7PPBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 100V 190A D2PAK |
| Quantity Available | 10665 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | 1.IRFS4010-7PPBF.pdf2.IRFS4010-7PPBF.pdf3.IRFS4010-7PPBF.pdf4.IRFS4010-7PPBF.pdf5.IRFS4010-7PPBF.pdf |
| Download | IRFS4010-7PPBF Details PDF |
| IRFS4010-7PPBF Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of IRFS4010-7PPBF | |||
|---|---|---|---|
| Manufacturer Part Number | IRFS4010-7PPBF | Category | |
| Manufacturer | Cypress Semiconductor (Infineon Technologies) | Description | MOSFET N-CH 100V 190A D2PAK |
| Package / Case | D2PAK | Quantity Available | 10665 pcs |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | D2PAK |
| Series | HEXFET® | Rds On (Max) @ Id, Vgs | 4mOhm @ 110A, 10V |
| Power Dissipation (Max) | 380W (Tc) | Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Package | Tube | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 9830 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Download | IRFS4010-7PPBF PDF - DE.pdfIRFS4010-7PPBF PDF - FR.pdfIRFS4010-7PPBF PDF - IT.pdfIRFS4010-7PPBF PDF - KR.pdfIRFS4010-7PPBF PDF - ES.pdf | ||
Product Model
IRFS4010-7PPBF
Introduction
High-power, N-Channel HEXFET Power MOSFET designed for high-efficiency power management applications.
Brand and Manufacturer
International Rectifier (Infineon Technologies)
Features
N-Channel MOSFET technology
High continuous drain current of 190A
Low on-resistance of 4 mOhm
High gate charge efficiency
Product Performance
Operates between -55°C to 175°C
Maximum power dissipation of 380W
High drain to source voltage of 100V
Technical Specifications
FET Type: N-Channel
Rds On: 4 mOhm @ 110A, 10V
Vgs(th) Max @ Id: 4V @ 250µA
Gate Charge (Qg) Max @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) Max @ Vds: 9830pF @ 50V
Dimensions, Shape, and Packaging
Packaged in a Tube
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB form factor
Quality and Reliability
Designed for high reliability and robust performance in demanding environments
Product Advantages
Excellent thermal performance
Enhanced power handling capabilities
Product Competitiveness
Optimized for high-efficiency power applications
Compatibility
Compatible with surface mount technology for easy integration into various circuit designs
Standard Certification and Compliance
Meets industry standards for electronic components
Lifespan and Sustainability
Built to endure long operational periods under rigorous conditions
Actual Application Fields
Suitable for power supply applications, DC-DC converters, and motor drives among others.
Email us: Info@Ariat-Tech.com or RFQ IRFS4010-7PPBF Online.
| IRFS4010-7PPBF Stock | IRFS4010-7PPBF Price | IRFS4010-7PPBF Electronics | |||
| IRFS4010-7PPBF Components | IRFS4010-7PPBF Inventory | IRFS4010-7PPBF Digikey | |||
| Supplier IRFS4010-7PPBF | Order IRFS4010-7PPBF Online | Inquiry IRFS4010-7PPBF | |||
| IRFS4010-7PPBF Image | IRFS4010-7PPBF Picture | IRFS4010-7PPBF PDF | |||
| IRFS4010-7PPBF Datasheet | Download IRFS4010-7PPBF Datasheet | Manufacturer Cypress Semiconductor (Infineon Technologies) | |||
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