Technical Information of IPD65R420CFDBTMA1
Manufacturer Part Number IPD65R420CFDBTMA1 Category  
Manufacturer Cypress Semiconductor (Infineon Technologies) Description MOSFET N-CH 650V 8.7A TO252-3
Package / Case PG-TO252-3 Quantity Available 2631 pcs
Vgs(th) (Max) @ Id 4.5V @ 340µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PG-TO252-3
Series CoolMOS™ Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V
Power Dissipation (Max) 83.3W (Tc) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Base Product Number IPD65R  
DownloadIPD65R420CFDBTMA1 PDF - DE.pdf
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