IPB60R600C6ATMA1
Part Number IPB60R600C6ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 600V 7.3A D2PAK
Quantity Available 2618 pcs new original in stock.
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Datasheets 1.IPB60R600C6ATMA1.pdf2.IPB60R600C6ATMA1.pdf3.IPB60R600C6ATMA1.pdf
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Technical Information of IPB60R600C6ATMA1
Manufacturer Part Number IPB60R600C6ATMA1 Category  
Manufacturer Cypress Semiconductor (Infineon Technologies) Description MOSFET N-CH 600V 7.3A D2PAK
Package / Case PG-TO263-3 Quantity Available 2618 pcs
Vgs(th) (Max) @ Id 3.5V @ 200µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PG-TO263-3
Series CoolMOS™ C6 Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V
Power Dissipation (Max) 63W (Tc) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Base Product Number IPB60R  
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