Product Model

PM300HHA120

Introduction

IGBT Module

Brand and Manufacturer

Mitsubishi Electric Semiconductor

Features

High-speed switching capability

Integrated gate drive circuit

Low power loss

High voltage endurance

Product Performance

Efficient thermal management

Long operational lifespan under high-load conditions

Robust against electrical fluctuations

Technical Specifications

Type: IGBT Module

Collector-Emitter Voltage: 1200 V

Collector Current: 300 A

Power Dissipation: Max values dependent on case temperature

Dimensions, Shape, and Packaging

Module type encapsulation

Standardized rectangular shape

Packaged with anti-static protection

Quality and Reliability

High-quality silicon materials used

Manufactured under stringent quality control standards

Reliability tested under various environmental conditions

Product Advantages

Enhanced conductivity and efficiency

Low thermal resistance

Superior electrical isolation

Product Competitiveness

Competitively priced within the IGBT module market

Offers superior performance metrics compared to peers

Compatibility

Compatible with standard IGBT drivers and heat sinks

Designed for easy integration into existing systems

Standard Certification and Compliance

Complies with international semiconductor standards

Certified for safety and environmental impact

Lifespan and Sustainability

Designed for long-term durability

Materials and production processes aimed at reducing environmental impact

Actual Application Fields

Renewable energy systems

Electric vehicle powertrains

Industrial motor drives

Power management systems

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