MBN800E33D
Part Number MBN800E33D
Manufacturer HITACHI
Description IGBT Modules
Quantity Available 1030 pcs new original in stock.
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Datasheets
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Technical Information of MBN800E33D
Manufacturer Part Number MBN800E33D Category Discrete Semiconductor
Manufacturer Hitachi Semiconductor Description IGBT Modules
Package / Case IGBT Module Quantity Available 1030 pcs
Condtion New Original Stock Warranty 100% Perfect Functions
Lead Time 2-3days after payment. Payment PayPal / Telegraphic Transfer / Western Union
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Product Model

MBN800E33D

Introduction

IGBT Module for High Power Switching Applications

Brand and Manufacturer

Hitachi Semiconductor

Features

High Efficiency and Low Power Loss

High Voltage Capability

Integrated Diode for Free-Wheeling Application

Low Inductance Module Structure for High-Frequency Operation

Product Performance

Fast Switching Speed

High Current Conducting Capabilities

Robust Thermal Performance

Stable Temperature Characteristics

Technical Specifications

Collector-Emitter Voltage: 3300V

Collector Current: 800A

Gate-Emitter Voltage: ±20V

Module Configuration: Dual

Dimensions, Shape, and Packaging

Module Package

Specific Dimensions Provided by Manufacturer

Standardized Mounting and Interface

Quality and Reliability

High Reliability Under Extreme Conditions

Long Operational Life

Comprehensive Quality Testing

Product Advantages

Energy Saving

Reduced System Complexity

Enhanced System Performance

Product Competitiveness

Cost-Effective for High Power Systems

Superior to Similar Products in Efficiency

Compatibility

Works with High Voltage and High Current Systems

Compatible with Standard Gate Drivers

Standard Certification and Compliance

Compliance with Industry Standards

Lifespan and Sustainability

Durable with High Mean Time Between Failures (MTBF)

Designed for Long Lifetime under Typical Operating Conditions

Actual Application Fields

Renewable Energy Systems

Uninterruptible Power Supplies (UPS)

Electric Vehicles (EVs)

Power Factor Correction (PFC) Systems

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