Product Model

BFG235E6327

Introduction

Low Noise Silicon Bipolar RF Transistor

Brand and Manufacturer

Infineon Technologies

Features

Low noise figure

High gain at high frequencies

Transition frequency typically 8 GHz

Collector current up to 25 mA

Emitter-base voltage 3V

Product Performance

Excellent linearity

High input and output return loss

Optimized for low voltage operation

Designed for RF amplification and mixing

Technical Specifications

Type: NPN

Package: SOT-23

Collector-emitter voltage: 12 V

Collector-base voltage: 20 V

Emitter-base voltage: 3 V

Dimensions, Shape, and Packaging

SOT-23 package

Compact form factor

Supplied in tape and reel for automated assembly

Quality and Reliability

Manufactured under stringent quality controls

Robust against environmental variables

Product Advantages

Superior noise figure performance

Ideal for high-frequency applications

Highly efficient for RF circuits

Product Competitiveness

Competitive pricing in specialized ICs market

Performance optimized for high-demand applications

Compatibility

Compatible with common SMT mounting techniques

Easily integrated into existing circuit designs

Standard Certification and Compliance

Meets specified industry standards

REACH and RoHS compliant

Lifespan and Sustainability

Long operational lifespan under recommended conditions

Designed for energy-efficient operation

Actual Application Fields

RF amplifiers in mobile communication

Satellite TV receivers

Oscillators in industrial and consumer electronics

Wireless LAN applications

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