| FDA28N50F | |
|---|---|
| Part Number | FDA28N50F |
| Manufacturer | onsemi |
| Description | MOSFET N-CH 500V 28A TO3PN |
| Quantity Available | 9350 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | 1.FDA28N50F.pdf2.FDA28N50F.pdf3.FDA28N50F.pdf4.FDA28N50F.pdf5.FDA28N50F.pdf6.FDA28N50F.pdf7.FDA28N50F.pdf8.FDA28N50F.pdf9.FDA28N50F.pdf |
| Download | FDA28N50F Details PDF |
| FDA28N50F Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of FDA28N50F | |||
|---|---|---|---|
| Manufacturer Part Number | FDA28N50F | Category | |
| Manufacturer | onsemi | Description | MOSFET N-CH 500V 28A TO3PN |
| Package / Case | TO-3PN | Quantity Available | 9350 pcs |
| Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-3PN |
| Series | UniFET™ | Rds On (Max) @ Id, Vgs | 175mOhm @ 14A, 10V |
| Power Dissipation (Max) | 310W (Tc) | Package / Case | TO-3P-3, SC-65-3 |
| Package | Tube | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Input Capacitance (Ciss) (Max) @ Vds | 5387 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 500 V | Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Base Product Number | FDA28 | ||
| Download | FDA28N50F PDF - DE.pdfFDA28N50F PDF - FR.pdfFDA28N50F PDF - ES.pdfFDA28N50F PDF - IT.pdfFDA28N50F PDF - KR.pdf | ||
Product Model
FDA28N50F
Introduction
N-Channel 500V 28A MOSFET designed for high-efficiency power management applications
Brand and Manufacturer
AMI Semiconductor / ON Semiconductor
Features
High voltage capability up to 500V
Continuous drain current of 28A at 25°C
Low Rds(on) of 175 mOhm maximizes efficiency
High power dissipation of 310W
Through-hole mounting for easy installation
Product Performance
Operates effectively within a temperature range of -55°C to 150°C
Supports a gate charge of 105nC at 10V
Input capacitance of 5387pF at 25V
Drive voltage of 10V for optimal Rds On
Technical Specifications
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 175 mOhm
Vgs(th) (Max) @ Id: 5V
Gate Charge (Qg) (Max) @ Vgs: 105nC
Input Capacitance (Ciss) (Max) @ Vds: 5387pF
Drive Voltage (Max Rds On, Min Rds On): 10V
Dimensions, Shape, and Packaging
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Packaging: Tube
Quality and Reliability
Lead-free and RoHS compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Product Advantages
High voltage and current capabilities suitable for demanding applications
Low on-resistance helps reduce power loss
Product Competitiveness
Competitive lead time of 6 weeks
Part of the UniFET series known for reliability and performance
Compatibility
Compatible with standard through-hole mounting procedures
Standard Certification and Compliance
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Lifespan and Sustainability
Durable construction suitable for industrial applications with a broad operating temperature range
Actual Application Fields
Power supply units
Motor controls
Inverter circuits
Switch mode power supplies
Email us: Info@Ariat-Tech.com or RFQ FDA28N50F Online.
| FDA28N50F Stock | FDA28N50F Price | FDA28N50F Electronics | |||
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| FDA28N50F Image | FDA28N50F Picture | FDA28N50F PDF | |||
| FDA28N50F Datasheet | Download FDA28N50F Datasheet | Manufacturer | |||
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