Product Model

7MBI75U4S120

Introduction

Insulated Gate Bipolar Transistor (IGBT) Module

Brand and Manufacturer

Fuji Electric (FE)

Features

High-speed switching capability

Low collector-emitter saturation voltage

High input impedance

Integrated free-wheeling diode

Product Performance

High efficiency in power conversion

Optimized thermal performance for stability

Durable in harsh electrical environments

Low energy losses

Technical Specifications

IGBT Type: 7MBI75U4S120

Rated voltage: 1200V

Rated current: 75A

Dimensions, Shape, and Packaging

Module Package - standardized for easy integration

Compact dimensions for space-saving installation

Packaging ensures safe transit and storage

Quality and Reliability

Built with high-quality materials

Subject to rigorous quality control processes

Reliable long-term operation

Product Advantages

Energy-saving by reduced losses

High current carrying capacity

Suitable for high voltage applications

Product Competitiveness

Competitively priced in the IGBT module market

Balanced performance for cost-effectiveness

Compatibility

Designed to be compatible with a wide range of systems and circuits

Standard Certification and Compliance

Complies with industry standard certifications for electronics and safety

Lifespan and Sustainability

Long operational life with sustainable performance over time

Eco-friendly materials and manufacturing processes

Actual Application Fields

Motor control systems

Inverter and converters for renewable energy

Power supplies for industrial use

Electric vehicle applications

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