Product Model

6MBP20RB120

Introduction

IGBT Module

Brand and Manufacturer

FUJI

Features

High-efficiency Insulated Gate Bipolar Transistor module

Integrated diode for fast switching

Low power loss

Product Performance

High current capacity

Enhanced thermal performance

Low switching losses

High-speed switching

Technical Specifications

Collector-Emitter Voltage: 1200 V

Collector Current: 20 A

Gate-Emitter voltage: ±20 V

Power Dissipation: 200 W

Dimensions, Shape, and Packaging

Rectangular module

Standard industry packaging

Dimensions: Specific measurements not provided

Quality and Reliability

Built to withstand high voltage and current stress

Long operational life under specified conditions

Product Advantages

Reduces system complexity

Improves overall system efficiency

Product Competitiveness

Competitively priced in IGBT module market

Well-suited for high voltage applications

Compatibility

Compatible with standard IGBT drivers and systems

Designed for easy integration into existing setups

Standard Certification and Compliance

Meets industry standards for safety and efficiency

Compliance with RoHS directives

Lifespan and Sustainability

Durable design ensures prolonged lifespan under normal usage

Environmentally friendly materials and manufacturing process

Actual Application Fields

Power management systems

Motor control systems

Renewable energy applications

Electric vehicle power systems

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