1MBI200L-120L-120
Part Number 1MBI200L-120L-120
Manufacturer FUJI
Description IGBT Modules
Quantity Available 2581 pcs new original in stock.
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Datasheets 1MBI200L-120L-120.pdf
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Technical Information of 1MBI200L-120L-120
Manufacturer Part Number 1MBI200L-120L-120 Category Discrete Semiconductor
Manufacturer FUJI Description IGBT Modules
Package / Case Quantity Available 2581 pcs
Condtion New Original Stock Warranty 100% Perfect Functions
Lead Time 2-3days after payment. Payment PayPal / Telegraphic Transfer / Western Union
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Product Model

1MBI200L-120

Introduction

IGBT Module

Brand and Manufacturer

FUJI

Features

Insulated Gate Bipolar Transistor technology

Low power loss

High switching speed

Integrated freewheeling diode

Product Performance

Efficient conductivity modulation

Optimized for high-voltage applications up to 1200 volts

Technical Specifications

Collector-Emitter Voltage: 1200 V

Collector Current: 200 A

Gate-Emitter Voltage: ±20 V

Power Dissipation: 780 W

Dimensions, Shape, and Packaging

Module type

Standard package

Dimensions specific to product datasheet

Quality and Reliability

High thermal and electrical stability

Long operational life

Complies with international reliability standards

Product Advantages

Enhanced thermal performance

Low switching and conduction losses

Robust module construction

Product Competitiveness

Competitive in high-power applications

Suitable for demanding environments

Compatibility

Compatible with standard gate drivers

Flexible integration with existing systems

Standard Certification and Compliance

Meets global industry standards for safety and performance

Lifespan and Sustainability

Designed for long-term reliability

Sustainability through energy-efficient performance

Actual Application Fields

Renewable energy systems

Electric vehicle powertrains

Industrial motor drives

Power management systems

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