Infineon Releases the 2025 GaN Power Semiconductor Outlook

Infineon’s latest report highlights that gallium nitride (GaN) is reaching a critical adoption point across multiple industries, driving improvements in energy efficiency. With advantages such as high efficiency, compact size, lightweight design, and cost reduction, GaN is already widely used in USB-C chargers and other consumer electronics. Its application is expected to expand further into electric vehicles (EVs), AI data centers, home appliances, and robotics.

GaN is crucial for enhancing power density in AI data centers, meeting the increasing demand for computing power. As power requirements evolve from 3.3 kW to 12 kW, GaN’s high power density optimizes rack space utilization. Additionally, integrating GaN with silicon (Si) and silicon carbide (SiC) enables an optimal balance between efficiency, power density, and system cost.

In the home appliance sector, GaN improves energy efficiency, increasing efficiency by 2% in 800 W applications, helping manufacturers achieve A-grade energy efficiency standards. In EVs, GaN-based onboard chargers and DC-DC converters offer higher charging efficiency and power density, with systems advancing beyond 20 kW. Additionally, GaN combined with SiC is expected to enhance 400V and 800V traction inverters, extending EV driving range.

The robotics industry will also benefit from GaN’s compact size and high performance, driving advancements in delivery drones, assistive robots, and humanoid robots. Infineon is increasing its investment in GaN R&D, leveraging 300mm GaN wafer manufacturing and bidirectional switch (BDS) transistor technology to maintain its leadership in digitalization and carbon reduction.