Your Guide to IRLZ44N Power MOSFET
2024-11-16 2101

The IRLZ44N is a logic-level MOSFET, encapsulated within the adaptable TO-220AB package, offering reliability and versatility that enhance its appeal across diverse electronic applications. This article delves into the IRLZ44N, with a focus on its distinctive features, advantages, and its extensive usage across everyday applications. Our exploration covers both aspects and actionable information from experiences, offering a comprehensive view of the IRLZ44N’s effective applications.

Catalog


IRLZ44N Pin Configuration


CAD Model of IRLZ44N


Overview of the IRLZ44N

The IRLZ44N MOSFET possesses a remarkably low gate threshold voltage of 5V, making it easily triggerable by most microcontrollers. This simplifies the circuit design process by removing the need for additional driver circuits. For those diving into power electronics, this feature provides flexibility, enabling us to design with a sense of adaptability and grace.

IRLZ44N Manufacturer Overview

Infineon Technologies, an entity with roots tracing back to Siemens Semiconductors, stands as a beacon of creativity in microelectronics. Their rich product range includes components like the logic-level IRLZ44N, which enhances electronic systems' performance in diverse applications.

Attributes of the IRLZ44N

• Lanar Cell Structure for Wide Safe Operating Area (SOA): The device features a planar cell structure specifically designed to provide a wide Safe Operating Area, ensuring stable and reliable operation even under high-stress conditions, thereby enhancing overall performance and longevity.

• Optimized for Broadest Availability from Distribution Partners: This product is engineered to maximize availability through a wide network of distribution partners, ensuring that it can be easily sourced and integrated into various applications across different industries.

• Product Qualification According to JEDEC Standards: The device is fully qualified to meet JEDEC (Joint Electron Device Engineering Council) standards, which are internationally recognized for ensuring quality and reliability in electronic components.

• Silicon Optimized for Applications Switching Below 100kHz: The silicon used in this device is optimized for low-frequency applications with switching speeds below 100kHz, making it ideal for applications that require stable performance in lower switching frequency ranges.

• Industry-Standard Through-Hole Power Package: The device comes in an industry-standard through-hole power package, which facilitates easy integration and mounting on PCBs (Printed Circuit Boards) and provides efficient heat dissipation.

• High-Current Rating: This component is rated for high current, making it suitable for demanding applications that require reliable performance under high-current conditions.

Advantages of IRLZ44N

Robustness and Durability

Known for its remarkable toughness, the IRLZ44N MOSFET thrives in challenging environments, making it perfect for demanding applications. This trait results in a prolonged operational life amid harsh conditions. It often becomes the go-to choice for us in automotive and industrial sectors due to its dependable performance, especially when equipment longevity demands attention.

Accessibility Through Distribution Channels

A broad network of distributors ensures the IRLZ44N is readily accessible, facilitating an uninterrupted procurement process. The ease of availability is cherished by manufacturers as it maintains continuous production flow. In industries where rapid technological advancements are constant, quick access to such reliable components offers a distinct competitive edge, mitigating downtime and maintaining smooth operations.

High Qualification Standards

The IRLZ44N boasts high qualification credentials, ensuring consistent quality and reliability. This makes it a preferred component for dependable performance for strict project specifications. The rigorous pre-market testing enhances its reputation for reliability, comforting us who demand trustworthy components for their work.

Exceptional Low-Frequency Performance

The IRLZ44N is known for its outstanding performance in low-frequency applications, a feature advantageous in power conversion and amplification tasks. Such efficiency and precision have proven highly beneficial, with us noting remarkable improvements in project outcomes, increased precision, and minimized energy loss when using components like the IRLZ44N possessing specialized performance traits.

Standard Pin-Out and High Current Support

Featuring a standard pin-out, the IRLZ44N simplifies replacements and integration processes within existing system designs. This ease of implementation and reduced maintenance complexity contribute to time savings during upgrades and repairs. Additionally, it supports high current flows, addressing substantial power delivery needs. Through this application, its design simplicity enhances system adaptability and resilience, offering flexibility and efficiency.

Application of the IRLZ44N

• High Voltage Linear Regulators: The IRLZ44N is suitable for high-voltage linear regulators, which are devices designed to provide a stable output voltage even when the input voltage is higher. These regulators are commonly used in applications where maintaining a precise, noise-free voltage is required, such as in sensitive analog circuits or high-fidelity audio equipment. The IRLZ44N's robust voltage handling capabilities make it ideal for these applications.

• Non-Resonant Switching Converters (Buck/Boost/Buck-Boost Topologies): The IRLZ44N can be used in non-resonant switching converters, which are typically used to step down (buck), step up (boost), or both step up and step down (buck-boost) voltages in a power supply. In these topologies, the IRLZ44N acts as a switching element, allowing efficient energy conversion with minimal heat generation, making it suitable for power supplies in industrial, automotive, and consumer electronics.

• Resonant Switching Converters (Half-Bridge or Full-Bridge Topologies): The IRLZ44N is also compatible with resonant switching converters, which operate at higher efficiency and lower electromagnetic interference (EMI) compared to non-resonant types. In half-bridge or full-bridge configurations, the IRLZ44N can switch at higher frequencies, reducing switching losses and improving overall efficiency in applications such as induction heating, LED lighting, and high-power inverters.

• Application as a High-Side Switch or Gate Driver in Resonant and Non-Resonant Topologies: The IRLZ44N can serve as a high-side switch in non-resonant topologies, controlling the flow of current through the main power path. Additionally, in resonant converters like the LLC (inductor-inductor-capacitor) topology, it can function as a gate driver, provided that the drain current and VDS (drain-source voltage) ratings are within safe operating limits. This versatility allows the IRLZ44N to be used in various power supply designs, ensuring reliable performance across different load conditions.

Substituting the IRLZ44N

IRF1010E

IRF1010EZ

IRF1010N

IRF1010Z

IRF1018E

IRF1405

IRF1405Z

IRF1407

IRF1607

IRF2805

IRF2807

IRF2807Z

IRF2907Z

IRF3007

IRF3205

IRF3205Z

IRF3305

IRF3710Z

IRLZ44N Circuit Overview

The primary advantage of the IRLZ44N, beyond its high temperature tolerance and robust VDS and drain current ratings, is its low gate voltage threshold. This low threshold allows an MCU's GPIO pin to drive the IRLZ44N well into its ON state. As shown in the transfer characteristics, logic levels from 5V families to LVCMOS can provide sufficient voltage to drive the IRLZ44N, resulting in minimal on-state resistance.

LED Control with a MOSFET

This project demonstrates a simple way to use a MOSFET to power an LED. While an Arduino can directly drive LEDs, a MOSFET or transistor is required when a single pin’s load exceeds 40mA or the combined load on all pins exceeds 200mA. For example, powering a 5V mechanical relay requires around 100mA, which is more than a single pin can provide, making a MOSFET required. For use with microcontroller output voltages, a logic-level MOSFET is required. These MOSFETs are typically identified by an "L" in their part number, such as the IRLZ44N or IRL540.

Logic-level MOSFETs like the IRLZ44N are ideal for Arduino projects, allowing high current switching at voltages above 5V. With proper heatsinking and temperature management, the IRLZ44N from International Rectifier can switch up to 47A at 55V. Be sure to check the datasheet for specific current limits, as these can vary across different IRLZ44N models. In the TO-220 package, the pin layout (from left to right) is Gate, Drain, and Source. To prevent accidental activation, a 10k pull-down resistor should be placed between the gate and source pins. Without this resistor, even slight electrostatic charges on the gate could turn the MOSFET on – a simple touch on the gate wire may be enough.

For the IRLZ44N to start conducting, the Gate Threshold Voltage (VGS) must be exceeded. For this MOSFET, VGS is approximately 2V. However, at this threshold, the MOSFET is only partially on and may carry just 1A. To determine the current it can switch at various gate voltages, refer to the charts in the MOSFET’s datasheet.

Technical Specifications

Infineon's IRLZ44NPBF presents a set of technical features, each contributing to a broad array of applications reliant on reliable electrical components. This MOSFET is crafted with considerable attention to detail, aligning with the expectations of contemporary electronic systems, and promises efficiency and durability. Below, we explore its primary features and their broader implications.

Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Current - Continuous Drain (Id) @ 25℃
47A Tc
Drive Voltage (Max Rds On, Min Rds On)
4V 10V
Number of Elements
1
Power Dissipation (Max)
3.8W Ta 110W Tc
Turn Off Delay Time
26 ns
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1997
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
22mOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
55V
Current Rating
47A
Lead Pitch
2.54mm
Number of Channels
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
83W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22mΩ @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
48nC @ 5V
Rise Time
84ns
Vgs (Max)
±16V
Fall Time (Typ)
15 ns
Continuous Drain Current (ID)
47A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
120 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
2 V
Height
19.8mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Alternative Options for IRLZ44NPBF

Parameter
IRLZ44NPBF
IRFZ46NPBF
IRFZ44NPBF
Manufacturer
Infineon Technologies
Infineon Technologies
Infineon Technologies
Mount
Through Hole
Through Hole
Through Hole
Package / Case
TO-220-3
TO-220-3
TO-220-3
Continuous Drain Current
47 A
49 A
53 A
Current - Continuous Drain (Id) @ 25℃
47A (Tc)
49A (Tc)
53A (Tc)
Threshold Voltage
2 V
2.1 V
4 V
Gate to Source Voltage (Vgs)
16 V
20 V
20 V
Power Dissipation
83 W
83 W
88 W
Power Dissipation - Max
3.8W (Ta), 110W (Tc)
94W (Tc)
107W (Tc)

Datasheet PDF

IRF1010EZ Datasheets

IRF1010EZ Details PDF
IRF1010EZ PDF - DE.pdf
IRF1010EZ PDF - FR.pdf
IRF1010EZ PDF - ES.pdf
IRF1010EZ PDF - IT.pdf
IRF1010EZ PDF - KR.pdf

IRF1010Z Datasheets

IRF1010Z Details PDF
IRF1010Z PDF - FR.pdf
IRF1010Z PDF - ES.pdf
IRF1010Z PDF - IT.pdf
IRF1010Z PDF - KR.pdf
IRF1010Z PDF - DE.pdf

IRF1405Z Datasheets

IRF1405Z Details PDF
IRF1405Z PDF - DE.pdf
IRF1405Z PDF - FR.pdf
IRF1405Z PDF - ES.pdf
IRF1405Z PDF - IT.pdf
IRF1405Z PDF - KR.pdf

IRF1607 Datasheets

IRF1607 Details PDF
IRF1607 PDF - DE.pdf

IRF2807Z Datasheets

IRF2807Z Details PDF
IRF2807Z PDF - DE.pdf
IRF2807Z PDF - FR.pdf
IRF2807Z PDF - ES.pdf
IRF2807Z PDF - IT.pdf
IRF2807Z PDF - KR.pdf

IRF3205Z Datasheets

IRF3205Z Details PDF
IRF3205Z PDF - DE.pdf
IRF3205Z PDF - FR.pdf
IRF3205Z PDF - ES.pdf
IRF3205Z PDF - IT.pdf
IRF3205Z PDF - KR.pdf

IRF3305 Datasheets

IRF3305.pdf
IRF3305 Details PDF
IRF3305 PDF - DE.pdf

IRFZ46NPBF Datasheets

IRFZ46NPBF.pdf
IRFZ46NPBF Details PDF
IRFZ46NPBF PDF - DE.pdf
IRFZ46NPBF PDF - FR.pdf
IRFZ46NPBF PDF - ES.pdf
IRFZ46NPBF PDF - IT.pdf
IRFZ46NPBF PDF - KR.pdf

IRFZ44NPBF Datasheets

IRFZ44NPBF Details PDF
IRFZ44NPBF PDF - DE.pdf
IRFZ44NPBF PDF - FR.pdf
IRFZ44NPBF PDF - ES.pdf
IRFZ44NPBF PDF - IT.pdf
IRFZ44NPBF PDF - KR.pdf
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Frequently Asked Questions [FAQ]

1. How do I Use the IRLZ44N?

To use a MOSFET as a switch, the gate voltage (VGS) must be higher than the source voltage. When the gate is connected to the source (VGS = 0), the MOSFET is turned off. For example, the IRFZ44N, a standard MOSFET, requires a gate voltage between 10V and 20V to turn on fully.

2. What is the IRFZ44N?

The IRFZ44N is an N-channel MOSFET capable of handling a high drain current of 49A and featuring a low RDS(on) value of 17.5 mΩ. It has a threshold voltage of 4V, at which it starts conducting. This makes it suitable for use with microcontrollers operating at 5V, though additional circuitry may be required for full switching.

3. What is the Difference Between IRLZ44N and IRFZ44N MOSFETs?

The IRLZ44N and IRFZ44N MOSFETs differ in their gate threshold voltages and intended use cases.

• IRLZ44N: A logic-level MOSFET with a low gate threshold voltage (typically 5V), allowing it to be fully switched on directly by a 5V microcontroller, such as an Arduino, without the need for a gate driver circuit.

• IRFZ44N: A standard MOSFET that requires a gate voltage of 10V to 20V to fully turn on. While it can be partially driven by a 5V signal, this results in limited drain current, making a gate driver circuit for optimal performance.

4. What is the Gate Threshold Voltage?

The gate threshold voltage (VGS) is the minimum gate-to-source voltage at which the MOSFET begins to conduct a small, specified amount of drain current (ID). This is typically measured with VGS = VDS. On a curve tracer, the drain supply provides VDS, and the gate is shorted to the drain using patch cords, ensuring VGS = VDS during testing.

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