The CM300DXP-24T is a high-performance IGBT module, designed for demanding industrial applications such as motor control, inverters, and power supplies. Rated at 1200V and 300A, it incorporates advanced 7th-generation CSTBT™ technology, ensuring low power loss and high efficiency. Its robust Solid Cover (SLC) package eliminates the substrate solder layer, boosting thermal cycle durability and reliability. The module offers press-fit terminals for streamlined assembly and flexible integration into modern systems. With a typical VCE(sat) of 1.60V, gate threshold voltage of 6.0V, and isolation voltage of 2500Vrms, it ensures reliable switching and electrical insulation. Thermal performance is optimized with low thermal resistance (88 K/kW for IGBT, 115 K/kW for the diode) and a maximum junction temperature of 175°C. This makes the CM300DXP-24T ideal for high-power, high-reliability systems.
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The CM300DXP-24T is manufactured by Mitsubishi Electric, a global leader in electrical and electronic equipment. This high-power switching insulated-gate bipolar transistor (IGBT) module is part of Mitsubishi Electric's T-series lineup, designed for applications requiring efficient and reliable power management.
This internal connection of the CM300DXP-24T IGBT module shows a dual configuration with two IGBT transistors (Tr1 and Tr2) and their associated freewheeling diodes (Di1 and Di2). These components are arranged in a half-bridge configuration, commonly used in inverter and motor drive applications. Terminal pins 1 through 11 are used for power connections and control signals.
Tr1 and Tr2 represent the two main IGBT switches, each paired with a diode to handle inductive load current during turn-off events. The module includes a built-in NTC thermistor (Th) for temperature monitoring, which helps in thermal management and protection. This compact integration of power semiconductors and sensing elements simplifies the design of power control systems, improves reliability, and supports efficient heat dissipation in high-power applications.
• High Voltage and Current Rating: Rated for 1200V collector-emitter voltage (VCES) and 300A collector current (IC) suitable for high-power applications.
• 7th-Generation CSTBT™ Technology: Offers low power loss and high-speed switching, improving system efficiency.
• Solid Cover (SLC) Package: Eliminates the traditional substrate solder layer, enhancing thermal cycle life and module reliability.
• Press-Fit Terminals: Enables easier and more reliable integration during assembly, improving manufacturability.
• High Isolation Voltage: Provides 2500Vrms isolation for improved safety and system robustness.
• NX-Type Dual Package: Optimized for compact and efficient system layout.
• Thermal Performance: Low thermal resistance for both IGBT and diode ensures effective heat dissipation and higher temperature endurance.
This CM300DXP-24T outline drawing provides detailed mechanical dimensions essential for mounting and integrating the IGBT module into a system. The overall module size is approximately 152 mm in length and 62 mm in width, with a height of about 20.5 mm, making it compact for high-power applications. The drawing includes top, side, and bottom views, showing exact measurements for terminal spacing, mounting hole positions, and PCB drill patterns.
The PCB drill hole pattern ensures proper alignment and secure attachment to the circuit board, with holes spaced at 94.5 mm x 29.2 mm centers. Each terminal is clearly labeled, and spacing is optimized for ease of connection and thermal management. This standardized packaging format helps designers ensure compatibility with heatsinks, gate drivers, and other components during mechanical and electrical integration.
• Motor and Motion Control: Ideal for industrial motor drives and servo systems, providing precise control and energy efficiency.
• Renewable Energy Systems: Utilized in photovoltaic (solar) power generation and wind power systems to efficiently convert and manage energy.
• Uninterruptible Power Supplies (UPS): Enhances reliability and performance in UPS systems, ensuring consistent power delivery during outages.
• Power Factor Correction (PFC): Improves power quality in electrical systems by optimizing the power factor, reducing energy losses.
• Traction and Transportation: Applicable in electric trains and other transportation systems requiring robust and efficient power modules.
• Welding Equipment: Supports high-performance welding applications by managing substantial power levels effectively.
• Electrical Overstress – Protect the module with surge suppression and operate strictly within its 1200V/300A ratings to avoid damage.
• Gate Drive Configuration – Apply recommended gate voltage (13.5V–16.5V) and resistance (1.6Ω–16Ω) to achieve efficient and reliable switching.
• Mechanical Mounting Stress – Follow manufacturer-specified mounting torque and flatness guidelines to avoid physical strain and thermal inefficiencies.
• Environmental Protection – Shield the module from dust, moisture, and corrosive elements using coatings or enclosures to maintain performance.
• Overheating: Prevent thermal damage by using effective heat sinks, ensuring proper ventilation, and monitoring junction temperature within specified limits.
Parameter Name and Symbol |
Value and Unit |
Collector-emitter voltage (VCES) |
1200 V |
Gate-emitter voltage (VGES) |
±20 V |
Collector current (IC) |
300 A |
Collector current, Pulse, Repetitive (ICRM) |
600 A |
Total power dissipation (Ptot) |
1700 W |
Emitter current (IE) |
300 A |
Emitter current, Pulse, Repetitive (IERM) |
600 A |
Parameter Name and Symbol |
Value and Unit |
Isolation voltage (Visol) |
2500 V |
Maximum junction temperature (Tvj max) |
175 °C |
Maximum case temperature (TC max) |
125 °C |
Operating junction temperature (Tv jop) |
-40 to +150 °C |
Storage temperature (Tstg) |
-40 to +125 °C |
Parameter Name and Symbol |
Value and Unit |
Collector-emitter cut-off current (ICES) |
1.0 mA |
Gate-emitter leakage current (IGES) |
0.5 µA |
Gate-emitter threshold voltage (VGE(th)) |
5.4-6.0-6.6 V |
Collector-emitter saturation voltage (VCE(sat)
,Terminal) Tvj =25°C |
1.60 – 2.00 V |
Collector-emitter saturation voltage (VCE(sat)
,Terminal) Tvj =125°C |
1.80 V |
Collector-emitter saturation voltage (VCE(sat)
,Terminal) Tvj =150°C |
1.85 V |
Collector-emitter saturation voltage (VCE(sat),Chip)
Tvj =25°C |
1.50 – 1.75 V |
Collector-emitter saturation voltage (VCE(sat),Chip)
Tvj =125°C |
1.70 V |
Collector-emitter saturation voltage (VCE(sat),Chip)
Tvj =150°C |
1.75 V |
Input capacitance (Cies) |
72.8 nF |
Output capacitance (Coes) |
2.1 nF |
Reverse transfer capacitance (Cres) |
0.9 nF |
Gate charge (QG) |
2.26 µC |
Turn-on delay time (td(on)) |
600 ns |
Rise time (tr) |
200 ns |
Turn-off delay time (td(off)) |
800 ns |
Fall time (tf) |
400 ns |
Emitter-collector voltage (VEC)
(Terminal) Tvj =25°C |
1.60 – 2.20V |
Emitter-collector voltage (VEC)
(Terminal) Tvj =125°C |
1.75 V |
Emitter-collector voltage (VEC)
(Terminal) Tvj =150°C |
1.80 V |
Emitter-collector voltage (VEC)
(Chip) Tvj =25°C |
1.50 – 1.85 V |
Emitter-collector voltage (VEC)
(Chip) Tvj =125°C |
1.50 V |
Emitter-collector voltage (VEC)
(Chip) Tvj =150°C |
1.50 V |
Recovery reverse time (trr) |
400 ns |
Reverse recovery charge (Qrr) |
23.4 µC |
Turn-on switching energy per pulse (Eon) |
35 mJ |
Turn-off switching energy per pulse (Eoff) |
30.7 mJ |
Reverse recovery energy per pulse (Err) |
20.5 mJ |
Internal lead resistance (RCC+EE) |
0.88 m Ω |
Internal gate resistance (rg) |
1.0 Ω |
Parameter Name and Symbol |
Value and Unit |
Zero-power resistance (R25) |
4.85-5.00 kΩ |
Deviation of resistance (ΔR/R) |
-7.3% to +7.8% |
B-constant (B(25/50)) |
3375 K |
Power dissipation (P25) |
10 mW |
Parameter Name and Symbol |
Value and Unit |
Thermal resistance, Junction to case,
per Inverter IGBT (Rth(j-c)Q) |
88 K/kW |
Thermal resistance, Junction to case,
per Inverter FWD (Rth(j-c)D) |
115 K/kW |
Contact thermal resistance, Case to heat
sink (Rth(c-s)) |
11.5 K/kW |
• High Efficiency and Low Losses
Incorporates 7th-generation CSTBT™ technology, reducing switching and conduction losses for enhanced energy efficiency.
• High Power Handling Capability
Supports up to 1200V and 300A, making it ideal for demanding industrial and renewable energy applications.
• Robust Thermal Performance
Features low thermal resistance and a maximum junction temperature of 175°C, allowing reliable operation under high thermal loads.
• Enhanced Reliability with SLC Package
The Solid Cover (SLC) design eliminates substrate solder layers—boosting thermal cycle lifetime and mechanical durability.
• Flexible and Easy Assembly
Press-fit terminal design simplifies manufacturing and ensures secure, reliable connections.
• High Electrical Isolation
Offers 2500Vrms isolation, ensuring safety in high-voltage environments.
• Compact NX Package
Space-saving dual configuration optimizes system design without compromising performance.
The CM300DXP-24T and CM300DY-12E are both 300A IGBT modules from Mitsubishi Electric, but they serve different performance tiers and application scopes. The CM300DXP-24T is rated at 1200V, whereas the CM300DY-12E is rated for 600V, making the DXP variant more suitable for high-voltage, high-power systems such as industrial drives and renewable energy applications. The CM300DXP-24T also benefits from Mitsubishi's advanced 7th-generation CSTBT™ technology, which delivers lower power losses and improved efficiency compared to the older technology found in the CM300DY-12E.
In terms of packaging, the CM300DXP-24T uses a compact and thermally optimized NX-type package with a Solid Cover (SLC) design that enhances reliability by eliminating common solder stress points. In contrast, the CM300DY-12E comes in a traditional dual (DY) package, which may require more external thermal management. Overall, the CM300DXP-24T offers more advanced features and is better suited for modern, high-demand applications, while the CM300DY-12E fits medium-power environments with lower voltage requirements.
With high power, better cooling, and strong safety features, the CM300DXP-24T is a great choice for modern power systems. It works better than older models and fits many industrial and energy uses. Order in bulk today to boost the performance and reliability of your equipment.
2025-03-31
2025-03-31
The CM300DXP-24T is a high-performance IGBT module made by Mitsubishi Electric, designed for heavy-duty power applications like motor drives and solar systems.
It is rated for 1200V collector-emitter voltage and 300A collector current, making it suitable for high-power operations.
It uses Mitsubishi's 7th-generation CSTBT™ technology, which helps reduce power loss and improve switching efficiency.
It features a Solid Cover (SLC) and NX-type package, which improves thermal performance and reliability while saving space.
It's ideal for motor control, renewable energy systems, UPS, welding equipment, power factor correction, and transportation systems.
It offers 2500Vrms electrical isolation, a maximum junction temperature of 175°C, and includes a built-in NTC thermistor for temperature monitoring.
Common issues include overheating, electrical overstress, mounting stress, and environmental damage, all of which can be managed with proper precautions.
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