Fuji Electric 2MBI300VB-060-50 Description, Specs, and Applications
2025-03-31 206

The 2MBI300VB-060-50 from Fuji Electric is a strong and reliable IGBT module made for factories and industries. It handles high power, works fast, and stays cool, making it a good fit for machines like motors, inverters, and UPS systems. This module is widely used by for you who need stable and long-lasting parts for heavy-duty equipment.

Catalog

2MBI300VB-060-50 Description

The 2MBI300VB-060-50 is a high-performance dual IGBT module from Fuji Electric, specifically designed for demanding industrial applications. It operates at a current rating of 300A and a voltage capacity of 600V, making it suitable for a wide range of power electronic circuits. Engineered with built-in free-wheeling diodes, the module ensures efficient energy recovery and reduced power losses during switching. Its low saturation voltage and high input impedance contribute to enhanced switching performance and reduced heat generation, which is required for improving the reliability and lifespan of industrial systems.

The 2MBI300VB-060-50 is widely used in AC motor controls, servo drives, uninterruptible power supplies (UPS), and general-purpose industrial inverters. Its robust design and superior switching capabilities make it a preferred choice for you. If your seeking reliable and cost-effective IGBT modules, we invite you to place your bulk orders with us today.

2MBI300VB-060-50 Features

• High Speed Switching - The 2MBI300VB-060-50 can switch on and off very quickly. This helps save energy, reduce heat, and make machines like motors and inverters work more smoothly.

• Voltage Drive - This module uses a voltage drive, which means it is easy to control. It needs a simple circuit to work and gives stable and reliable performance without much noise.

• Low Inductance Module Structure - The module is built with a low inductance design. This helps reduce unwanted spikes and noise when switching, making the system safer and more stable.

2MBI300VB-060-50 Circuit Diagram

The circuit diagram shows the internal structure of the 2MBI300VB-060-50, which is a dual IGBT module. It has two IGBT transistors connected in a half-bridge configuration. The top IGBT is controlled by Gate 1 (G1) and Emitter 1 (E1), while the bottom IGBT is controlled by Gate 2 (G2) and Emitter 2 (E2). The terminals C1, C2E1, and E2 are the main power terminals. C1 acts as the positive terminal, E2 as the negative terminal, and C2E1 is the midpoint connection between the two IGBTs. Each IGBT also has a built-in freewheeling diode that protects the circuit from voltage spikes when switching. This structure is commonly used for motor drives, inverters, and other power control applications because it allows smooth switching and easy control of high voltage and current.

2MBI300VB-060-50 Maximum Ratings

Note *1: All terminals should be connected together during the test.

Note *2: Recommendable Value: 2.5-3.5 Nm (M5 or M6)

Note *3: Recommendable Value: 2.5-3.5 Nm (M5)

2MBI300VB-060-50 Electrical Characteristics

2MBI300VB-060-50 Thermal Resistance Characteristics

*Note 4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

2MBI300VB-060-50 Performance Curves

The performance curves of the 2MBI300VB-060-50 IGBT module illustrate how the collector current (I_C) varies with the collector-emitter voltage (V_CE) at different gate-emitter voltages (V_GE) and junction temperatures (T_j). In the left graph, which represents Tj = 25°C, we observe that as VGE increases from 8V to 20V, the collector current rises for the same V_CE. Higher gate voltages enhance the IGBT's conduction capability, allowing it to deliver higher currents. However, as the curves saturate, the collector current becomes less sensitive to increases in V_CE, indicating the IGBT's active and saturation regions.

In the right graph, where Tj = 150°C, the collector current is lower compared to the 25°C case for the same V_GE. This indicates that higher temperatures reduce the IGBT's current handling capability due to increased internal resistance and carrier mobility reduction. Nonetheless, the curves maintain the same trend — higher V_GE still leads to higher I_C, but with a reduced peak current. These graphs are required for you to understand how the device will behave under different thermal and voltage conditions in real applications.

The left graph shows how the collector current (I_C) changes with collector-emitter voltage (V_CE) at a fixed gate-emitter voltage of 15V under different junction temperatures. As the temperature rises from 25°C to 150°C, the IGBT's current capability decreases. This is a common characteristic of IGBT modules due to increased carrier scattering and reduced carrier mobility at higher temperatures. Even at the same gate drive, the output current is lower at higher temperatures, which we must consider when evaluating thermal performance and load capacity.

The right graph illustrates the relationship between V_CE and V_GE at 25°C for different collector currents (150A, 300A, and 600A). It emphasizes that higher collector currents require higher gate-emitter voltages to maintain lower V_CE values. A lower V_CE drop at higher V_GE means lower conduction losses. This curve is required for determining the required gate voltage to minimize conduction losses when the IGBT operates at different load currents.

The left graph shows the relationship between gate capacitances (C_ies, C_oes, and C_res) and collector-emitter voltage (V_CE) at 25°C. As V_CE increases, all capacitances decrease, especially C_oes and C_res, which are in determining switching speed. Lower capacitances at higher voltages help the IGBT achieve faster switching. C_ies, being relatively flat, mainly affects gate drive requirements but not switching losses. This curve helps us estimate the IGBT's behavior during turn-on and turn-off transitions.

The right graph illustrates the dynamic gate charge characteristics. It shows how the gate-emitter voltage (V_GE) and collector-emitter voltage (V_CE) vary with the accumulated gate charge (Q_g). The flat regions of V_GE indicate the Miller plateau, where most of the switching loss occurs due to the charging of Coes. A higher plateau means more charge is required to switch the device.

2MBI300VB-060-50 Alternatives

Comparison Between 2MBI300VB-060-50 and SKM300GB063D

2MBI300VB-060-50 Advantages and Disadvantages

Advantages of 2MBI300VB-060-50

• Handles High Current - Delivers up to 300A, perfect for heavy-duty machines and industrial equipment.

• Fast Switching - Switches quickly, lowering power loss and boosting overall system performance.

• Low Power Loss - Low saturation voltage reduces heat and energy loss during operation.

• Built-in Free-Wheeling Diodes - Protects circuits from voltage spikes, ensuring smooth and safe performance.

• Good Heat Management - Excellent heat dissipation thanks to low thermal resistance, keeping the module cool and reliable.

• Reliable for Tough Jobs - Works well even in harsh environments like motor drives and UPS systems.

• Easy to Use - Standard VB package fits easily into most industrial systems.

Disadvantages of 2MBI300VB-060-50

• Voltage Limit - Maximum 600V may not be enough for systems needing 1200V or more.

• Moderate Gate Charge - Needs strong gate drivers for fast switching applications.

• Large Size - Bigger module, not ideal for compact or space-limited designs.

• Higher Cost - Usually priced a bit higher than some other brands.

2MBI300VB-060-50 Applications

• Inverter for Motor Drive - This module helps control the speed and power of motors. It makes motors work more smoothly and saves energy.

• AC and DC Servo Drive Amplifier - It is used in servo drives to move machines accurately. This helps in robots and machines that need precise control.

• Uninterruptible Power Supply (UPS) - The module helps UPS systems keep giving power when electricity goes out. It protects devices from shutting down suddenly.

• Industrial Machines, such as Welding Machines - It is used in machines like welders. It handles strong power and makes sure the machines work safely and reliably.

2MBI300VB-060-50 Packaging Dimensions

The packaging outline of the 2MBI300VB-060-50 module shows the physical size and terminal arrangement. The module is about 92 mm long and 45 mm wide, making it compact for high-power applications. The terminal layout includes three main power terminals labeled C1, E2, and C2E1, spaced clearly for easy and safe wiring.

The control terminals (G1, E1, G2, E2) are placed on the side using tab-type connectors for simple connection to the gate driver circuit. The mounting holes and M5 screw positions are designed to fit securely into the heat sink or device frame. The module's low height of about 30 mm helps in building low-profile systems. Overall, this design ensures easy installation, strong mechanical stability, and good electrical connections.

2MBI300VB-060-50 Manufacturer

The 2MBI300VB-060-50 is manufactured by Fuji Electric, a well-known Japanese company. Fuji Electric is a global leader in power electronics and industrial equipment. They specialize in making high-quality IGBT modules, power semiconductors, inverters, and control systems used in many industries.

Conclusion

The 2MBI300VB-060-50 is a great choice for you looking for a powerful and safe IGBT module. It is easy to use, works well under tough conditions, and is trusted by many industries. For bulk orders, this module is a smart and cost-effective option.

Datasheet PDF

2MBI300VB-060-50 Datasheets