1N4148 Diode vs 1N4007 Diode Comparison Guide
2023-11-18 7871

The diode serves a simple but vital function as a fundamental component of electronic circuits. Through its unidirectional conducting properties, the diode plays a key role in power conversion, signal processing, circuit protection and many other applications. Understanding the different types of diodes and their applications is fundamental to electronic engineering and circuit design.

Catalog

What is a diode?

A diode, also known as a crystal diode, is a basic semiconductor electronic component that allows current to flow in a single direction while preventing it from flowing in the opposite direction, making it an electronic device with unidirectional current conduction. It plays a key role in power conversion, signal processing, circuit protection and many other applications. In this article, we will explore the differences between 1N4148 and 1N4007, revealing features and performance characteristics to make the optimal choice for your electronics project.

1N4148 and 1N4007 Overview

Overview of 1N4148:

Figure 1: 1N4148

1N4148 is a commonly used glass case package silicon switching diode, its withstand voltage value of 75V, rectifier current of 150mA, switching time of 4nS. In the circuit this tube is commonly used in a variety of small-current rectifier, clamp, protection, limiting and other circuits.

1N4007 Diode Overview:

Figure 2: 1N4007

1N4007 is a commonly used silicon rectifier diode, its rectification current is 1A, voltage withstand value of 1000V, rectifier diode is mainly a variety of low-frequency half-wave rectifier circuit, such as the need to achieve the full-wave rectifier need to be connected to the rectifier bridge use.

Usually 1N4007 contains a PN junction with anode and cathode terminals, the carriers in the P region are holes and the carriers in the N region are electrons. When a positive voltage is applied to the P-region relative to the N-region, a large current can be passed with a low voltage drop (typically 0.7V), known as the forward conduction state. If the opposite voltage is added, the reverse current is very small (reverse leakage current), known as the reverse blocking state.

Silicon rectifier diodes have high breakdown voltage, small reverse leakage current and good high temperature performance. Usually high-voltage high-power rectifier diodes are manufactured with high-purity monocrystalline silicon (doped more easily reverse breakdown). The junction area of this device is larger, can pass a larger current (up to thousands of amps), but the operating frequency is not high generally in the tens of KHz below.

Characteristics of diodes 1N4148 and 1N4007

1N4148

Figure 3: DO-35 Package Diagram

1N4148 is a small high-speed switching diode, packaged in the form of DO-35, its switching is relatively rapid, is commonly used in circuits with high signal frequency for unidirectional conduction isolation, common use scenarios are communication equipment, computer boards, television circuits and industrial control circuits.

1N4148 Main Features：

high-frequency signal high-speed switching, the maximum reverse recovery time is small: it can be switched from the on state to the cut-off state in a very short time, and vice versa. At the same time, 1N4148 can switch from on-state to off-state more quickly, reducing the time delay in the switching process.

high reliability ABA glass package: ABA glass package is a special package structure, in which "A" represents the two ends of the metal pins, "B" represents the middle of the glass body. This structural design ensures that the internal semiconductor chip is effectively isolated from the external environment. Prevent the penetration of moisture and oxygen, thereby reducing corrosion and oxidation, improving the stability and life of the diode.

high conductance: in the conduction state 1N4148 can effectively allow current to pass, while maintaining a low forward voltage drop. It is usually around 0.7V. This means that during normal operation, it does not create much resistance to the current passing through it.

It is also important to note that the IN4148 is available in both through-hole and surface packages.

The 1N4148 diode in the through-hole package has long metal pins that need to be passed through holes in the board and then soldered. This type of package provides good mechanical retention strength and is suitable for applications with high mechanical stress. However, mounting usually requires manual or wave soldering, making it more suitable for low-volume production or prototyping.

The surface mount package 1N4148 is smaller in size and is suitable for high density board designs. It can be mounted directly on the board surface, usually using a reflow soldering process, and is more suitable for automated mass production. Surface mount packages have lower mechanical strength than through-hole packages. Due to the smaller package and direct mounting to the board surface, the surface mount package may not dissipate as much heat as the through-hole package.

1N4007

Figure 4: DO-41 Package Diagram

1N4007 is a plastic package type DO-41 general purpose silicon rectifier diode. It is capable of converting alternating alternating current (AC) into pulsed direct current (DC) in a single direction, and is widely used in various AC to DC rectifier circuits and bridge rectifier circuits.

1N4007 main features

high voltage tolerance: 1N4007 can withstand up to 1000V reverse voltage, suitable for high voltage applications.

medium current capacity: 1N4007 can withstand high forward current, generally around 1 Ampere. It is the main parameter of the rectifier diode, and is the main basis for the selection of rectifier diodes.

low forward voltage drop: in normal operating conditions, 1N4007 forward voltage drop is usually around 1V, which helps to maintain the overall efficiency of the circuit.

In terms of packaging, the 1N4007 is usually packaged in a DO-41 type package, which is a through-hole type package suitable for a wide range of circuit board designs.

Difference between diode 1N4148 and 1N4007

different switching speed: 1N4148 has a very fast switching speed, suitable for high frequency signal switching and rectification. The switching speed of 1N4007 is relatively slow compared to 1N4148, generally applicable to low-frequency or DC circuit.

the current tolerance is different: 1N4148 current tolerance is low, generally in the hundreds of milliamps level. In contrast, the 1N4007 can withstand higher currents, typically around 1 Ampere.

different voltage levels: 1N4148 can withstand a lower reverse breakdown voltage, usually around 100V. While 1N4007 can withstand up to 1000V reverse voltage.

Conclude

1N4148: 100V reverse withstand voltage and 150mA average forward current, very suitable for general occasions for general rectification. 4nS reverse recovery time is enough to meet the majority of occasions. Suitable for high frequency signal processing and digital circuits

1N4007: Maximum forward average rectifier current: 1A, Maximum reverse withstand voltage: 1000V, Low reverse leakage current: 5uA (max), Forward voltage drop: 1.0V, Maximum reverse peak current: 30uA, Reverse recovery time: 30us; Commonly used for power supply rectification and high voltage applications.

While the 1N4007 can replace the 1N4148 in contexts where reaction speed is not critical, the selection between these two diodes should be based on the specific requirements of the application.

That covers all the content of this article. If you have any questions, feel free to contact us. ARIAT TECH will reply to you promptly.